K4RAH086VB-BIWM - DDR5 16Gb 5600Mbps DRAM | Samsung
부품 번호: K4RAH086VB-BIWM ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $6.5 | $6.50 |
| 10 | $6.05 | $60.50 |
| 100 | $5.6 | $560.00 |
| 500 | $5.2 | $2,600.00 |
| 1,000 | $4.85 | $4,850.00 |
K4RAH086VB-BIWM 개요
DDR5 SDRAM (Double Data Rate 5 Synchronous Dynamic Random-Access Memory) is the fifth generation of the DDR SDRAM memory family, sitting in the memory hierarchy above DDR4 and below LPDDR5 for power-sensitive mobile applications. A DDR5 DRAM component provides the main-system memory function in servers, workstations, desktops, and embedded compute platforms, doubling the bank-group parallelism of DDR4 and integrating a power management architecture that moves voltage regulation onto the memory module for improved supply integrity.
Key features of the K4RAH086VB-BIWM include its 16-gigabit single-die density, operation as part of the DDR5 standard with on-die termination (ODT) set through mode registers, internal calibration via MPC commands, and asynchronous reset support. Per the Samsung DDR5 16Gb B-die specification, the family supports posted CAS and programmable CAS latency (CWL) in DLL-enabled mode, features that improve bus efficiency and timing flexibility in multi-rank module designs.
Technically, this device belongs to the Samsung K4RAH0x6VB family covering x4 and x8 organizations. The synchronous architecture achieves double-data-rate transfers on both clock edges, and DDR5's dual 32-bit sub-channel module topology allows the memory controller to service two independent streams simultaneously, reducing effective latency for bandwidth-hungry workloads. On-die ECC support in the DDR5 standard improves reliability at gigabit densities without external ECC pins.
Typical applications include next-generation DDR5 RDIMM and UDIMM memory modules for data-center servers, high-performance computing and AI accelerator host memory, and high-bandwidth embedded compute designs. The -BIWM speed grade and industrial temperature indication make it suited to both commercial server and extended-temperature platforms.
Design consideration: DDR5 operates at 1.1 V and is NOT pin- or voltage-compatible with DDR3 or DDR4 controllers - verify JEDEC DDR5 controller support, and confirm the exact speed bin and operating temperature range against the official Samsung datasheet before design-in.
This page synthesizes distributor stock data, family-level alternatives, and DDR5 design guidance not found in a single manufacturer datasheet.
드롭인 대체품: K4RAH086VB-BIWM — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K4RAH086VB-BIWM (동일 폼 팩터 및 풋프린트) — 차이점: Data Rate, Interface, Package, Operating Temperature, Density.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K4RAH086VB-BCQK
✅ 드롭인✓ 재고 있음
$41.0156 / 개
데이터시트 보기 →K4RAH086VB-BCWM
✅ 드롭인✓ 재고 있음
$44.5455 / 개
데이터시트 보기 →K4RAH086VB-BIQK
✅ 드롭인✓ 재고 있음
$4.25 / 개
데이터시트 보기 →H5CG48MEBDX014N
✅ 드롭인✓ 재고 있음
$41.68 / 개
데이터시트 보기 →H5CG48AGBDX018N
✅ 드롭인✓ 재고 있음
$87.42 / 개
데이터시트 보기 →K4RAH086VB-BIWM 최대 정격 & 전기적 특성
| 메모리 유형 | DDR5 SDRAM |
| Density | 16 Gb |
| 데이터 속도 | 5600 Mbps per pin |
| 실장 유형 | Surface Mount |
| CAS Latency (CWL) | Programmable (per Samsung DDR5 16Gb B-die spec) |
| DLL | DLL Enabled mode operation |
| On-Die Termination | Yes (via Mode Register setting) |
| Internal Calibration | Yes (via MPC) |
| Asynchronous Reset | Yes |
| Posted CAS | Yes |
| Maximum Data Rate (family, per spec Rev1.0) | 4800 Mbps per pin (DDR5-4800, general applications) |
K4RAH086VB-BIWM standard 핀 구성 가이드
K4RAH086VB-BIWM(standard 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: K4RAH086VB-BIWM.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
K4RAH086VB-BIWM 적합 용도: 6 애플리케이션s: DDR5 Server Memory Modules, High-Performance Computing and AI Systems, Desktop and Workstation UDIMMs, Embedded and Industrial Computing, Networking and Communication Equipment, Test, Measurement, and Validation Platforms.
DDR5 Server Memory Modules
The K4RAH086VB-BIWM is commonly used in next-generation DDR5 memory modules for data-center servers, where its 16Gb density and 5600 Mbps per pin data rate enable high-capacity RDIMM and LRDIMM designs. DDR5's dual 32-bit sub-channel architecture lets the memory controller service two independent access streams per module, improving effective bandwidth utilization. Features such as posted CAS, programmable CWL, and internal calibration via MPC support multi-rank operation with tight timing margins. Placed on JEDEC DDR5 modules with onboard PMIC power delivery at 1.1 V class, the device delivers the capacity-per-DIMM scaling that DDR4 16Gb-class parts could not achieve at equivalent channel counts.
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High-Performance Computing and AI Systems
AI training and HPC workloads are memory-bandwidth-bound, and the K4RAH086VB-BIWM's DDR5-5600 class throughput addresses this directly. Sixteen-gigabit dies allow designers to populate eight or more DIMM slots with maximum capacity, keeping large model weights and activation tensors resident in host memory. On-die termination via mode register reduces signal-integrity engineering effort on heavily loaded multi-slot buses, while asynchronous reset simplifies system bring-up and error recovery. The device's high parallel access efficiency, per broker descriptions, positions it squarely in the high-bandwidth memory segment where throughput per watt determines cluster-level performance and total cost of ownership.
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Desktop and Workstation UDIMMs
For next-generation desktop and workstation platforms with DDR5 memory controllers, the K4RAH086VB-BIWM provides the 16Gb density needed for 32 GB-class UDIMMs built from sixteen x8 devices. DDR5's on-module PMIC offloads voltage regulation from the CPU platform, improving supply integrity at 5600 Mbps operation, and on-die ECC improves data reliability without external ECC devices. Compared with DDR4 designs, the dual sub-channel topology halves the effective access granularity to 32 bytes, which improves cache-line efficiency for consumer workloads such as gaming and content creation where random access latency dominates perceived performance.
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Embedded and Industrial Computing
Industrial edge servers, network appliances, and embedded controllers transitioning to DDR5 platforms can use the K4RAH086VB-BIWM as soldered-down main memory on COM Express, ATX-style embedded boards, or custom carrier designs. The FBGA surface-mount package supports standard SMT assembly, and the -BI suffix family coding is associated with extended-temperature-grade operation suited to industrial environments per Samsung naming convention. On-die termination and internal calibration via MPC reduce bring-up complexity for embedded memory controllers from vendors such as AMD, Intel, and Arm-based SoC suppliers. Confirm the exact temperature range in the Samsung Rev 1.0 specification against the enclosure thermal profile before qualification.
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Networking and Communication Equipment
High-throughput routers, switches, and 5G baseband units require deep packet buffers, and the K4RAH086VB-BIWM supplies 16Gb of DDR5 buffer memory at 5600 Mbps per pin. DDR5's posted CAS and programmable CWL features allow network processors to tune read latency against bus turnaround, an important trade-off when packet-processing deadlines are measured in microseconds. Compared with keeping DDR4-3200 buffer memory, a DDR5 subsystem of the same width offers substantially higher sustained bandwidth for queue management and flow statistics collection. Designers should budget the DDR5 controller's refresh and calibration overhead - including MPC-based internal calibration intervals - when sizing worst-case buffer latency.
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Test, Measurement, and Validation Platforms
Memory ATE handlers, DDR5 protocol analyzers, and module validation boards use the K4RAH086VB-BIWM as a reference device for signal-integrity characterization and compliance testing of DDR5-4800/5600 class interfaces. Because this die is a production Samsung 16Gb B-die part, test platforms built around it replicate real-world module behavior, including on-die termination loading and calibration current transients during MPC operations. The asynchronous reset input enables deterministic state recovery between test sequences. Engineering teams should operate the device in DLL-enabled mode per the Samsung specification, as timing parameters in the family datasheet are only guaranteed under that configuration.
추천
추천 제품 요약
엔지니어링 참조 데이터: K4RAH086VB-BIWM — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K4RAH086VB-BCQK | K4RAH086VB-BCWM | K4RAH086VB-BIQK | H5CG48MEBDX014N | H5CG48AGBDX018N |
|---|---|---|---|---|---|---|
| Package | FBGA (surface mount) | FBGA - same | FBGA - same | FBGA - same | FBGA - same class | FBGA - same class |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | SK Hynix | SK Hynix |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
주요 차별점
- Higher speed grade in the same 16Gb DDR5 family (vs K4RAH086VB-BCWM)
- Lowest-risk substitution path within the same die family (vs K4RAH086VB-BCQK)
- DDR5-generation features over DDR4 predecessors (vs K4A8G165WB)
설계 노트
DDR5 is NOT compatible with DDR4 or DDR3 controllers, sockets, or power rails. The K4RAH086VB-BIWM requires a JEDEC DDR5-compliant memory controller, and DDR5 moves voltage regulation onto the module via a dedicated PMIC, so a board-level design must include that regulator and its I2C/I3C management interface. Beware of third-party broker mislabeling: at least one distributor listing described the sister part K4RAH086VB-BCWM as DDR3 - it is DDR5 16Gb 5600 Mbps per icDirectory. Always verify against the official Samsung Rev 1.0 specification.
At 5600 Mbps per pin, DDR5 fly-by routing demands careful length matching within the dual 32-bit sub-channel topology. Use the on-die termination (ODT) mode register settings from the Samsung Rev 1.0 spec for the specific slot population, and enable the MPC-based internal calibration during power-up and periodically during operation to track temperature drift. Timing parameters in the datasheet are guaranteed only in DLL-enabled mode; do not characterize a design in DLL-off mode and assume the margins transfer.
The DDR5 class operates at a nominal 1.1 V supply (verify the exact VDD/VDDQ values in the Samsung Rev 1.0 datasheet before finalizing the power tree). Estimated: a fully populated module with sixteen 16Gb devices switching at 5600 Mbps can draw several amps of transient current on VDDQ during simultaneous read bursts, so the on-module PMIC must be sized for peak current plus calibration transients, with bulk capacitance near the PMIC output and local decoupling at each device's supply balls.
For soldered-down designs, follow the Samsung DDR5 component layout guidelines: reference the address/command bus to a solid ground plane, keep the FBGA via fan-out symmetrical to preserve ball-map signal pairing, and route DQ/DM/DQS within tight intra-byte length match. Samsung's DDR5 Device Operation datasheet (companion to this component spec) covers read/write leveling and ODT tuning sequences needed during memory-controller firmware bring-up.
규정 준수 정보
Compliance status not stated in the provided verified data. Confirm RoHS/REACH certificates on Samsung Semiconductor's official product page.
