K4RBH086VB-BCWM - DDR5 16Gb DRAM 2Gx8 FBGA-82 | Samsung
부품 번호: K4RBH086VB-BCWM ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
K4RBH086VB-BCWM 개요
A DRAM (Dynamic Random Access Memory) is a volatile semiconductor memory that stores each bit in a separate capacitor within an integrated circuit, requiring periodic refresh to retain data. In the memory hierarchy, DRAM sits between CPU caches (SRAM) and storage (NAND flash), serving as the primary working memory of computing systems. DDR5 SDRAM is the fifth generation of double-data-rate synchronous DRAM, doubling the bank groups and burst length of DDR4 while lowering the operating voltage to 1.1V for roughly 30% better power efficiency.
Key features of the K4RBH086VB-BCWM include its 16Gb density per die, x8 organization suited to mainstream DIMM and soldered-down designs, and the industrial-standard 82-FBGA surface-mount package used across all DDR5 discrete DRAM vendors, which simplifies second-source qualification. The BCWM speed-grade suffix in the sister K4RAH part denotes 5600 Mbps operation; the exact data rate of the K4RBH grade should be confirmed against the official Samsung datasheet before design-in.
Architecturally, the device follows the JEDEC DDR5 specification with an on-die ECC (link ECC), a decision-feedback equalization capable DQ receiver, and a serial presence detect interface managed by the module's PMIC in DIMM applications. Command/address lines operate in single-data-rate mode with compliance masks defined in the Samsung 16Gb B-die specification.
Typical applications include DDR5 server RDIMM/LRDIMM modules, networking switch line-card memory, AI accelerator memory buffers, and high-density embedded computing boards.
Design consideration: DDR5 routing requires length-matched fly-by command/address topology and on-die termination settings tuned per the Samsung datasheet; do not assume DDR4 layout rules transfer.
This page synthesizes distributor inventory data, drop-in same-footprint alternatives, and practical design notes not found in the manufacturer datasheet alone.
드롭인 대체품: K4RBH086VB-BCWM — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K4RBH086VB-BCWM (동일 폼 팩터 및 풋프린트) — 차이점: Interface, Operating Temperature, Package, Density, Data Rate.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K4RAH086VB-BCWM
✅ 드롭인✓ 재고 있음
$44.5455 / 개
데이터시트 보기 →K4RAH086VP-BCWM
✅ 드롭인✓ 재고 있음
가격 문의
데이터시트 보기 →K4RBH086VM-BCWM
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
K4RHE086VB-BCWM
✅ 드롭인✓ 재고 있음
$7.65 / 개
데이터시트 보기 →K4RHE165VB-BCWM
✅ 드롭인✓ 재고 있음
가격 문의
데이터시트 보기 →K4RBH086VB-BCWM 최대 정격 & 전기적 특성
| 메모리 유형 | DDR5 SDRAM |
| Density | 16 Gb |
| 메모리 구성 | 2G x 8 |
| 공급 전압 | 1.1 V |
| 인터페이스 | Parallel, DDR5 |
| 패키지 | 82-FBGA |
| 실장 유형 | Surface Mount |
| 동작 온도 | 0 C to 85 C |
| Product Status | Mass Production |
| Memory Format | Volatile (DRAM) |
| Technology | DDR5 SDRAM |
| Manufacturer | Samsung Semiconductor |
| On-Die ECC | Yes (per JEDEC DDR5 specification) |
K4RBH086VB-BCWM 82-fbga 핀 구성 가이드
K4RBH086VB-BCWM(82-fbga 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: K4RBH086VB-BCWM.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
K4RBH086VB-BCWM 적합 용도: 6 애플리케이션s: Server RDIMM/LRDIMM Memory Modules, Networking Switch Line Cards, AI Accelerator Memory Buffers, Industrial Embedded Computing, Client PC Soldered-Down Memory (LPDDR-style desktop/notebook), Test, Measurement and Validation Platforms.
Server RDIMM/LRDIMM Memory Modules
The K4RBH086VB-BCWM serves as a core building block for DDR5 registered and load-reduced DIMMs used in data center servers. Its 16Gb density and 2G x 8 organization allow module designers to reach 32GB per rank with eight components on a 64-bit bus, scaling to 1TB+ LRDIMM configurations with buffering. The 1.1V VDD delivers Samsung's advertised ~30% power efficiency gain over DDR4, directly reducing server thermal load - a critical factor in 1U/2U designs with constrained airflow. In a module the DRAMs connect via fly-by CA routing to the register clock driver (RCD), while an on-module PMIC sequences the VDD/VDDQ/VPP rails. Design consideration: rank-to-rank timing and thermal sensor placement (TSO) must follow the JEDEC DDR5 module specification for training to pass across all populated ranks.
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Networking Switch Line Cards
High-port-count networking switches use DDR5 DRAM such as the K4RBH086VB-BCWM for packet buffers, flow tables, and control-plane memory on line cards. Samsung's own channel listings for this family explicitly target 'server, networking, and advanced embedded applications.' The x8 organization suits switch ASIC memory controllers that require 64- or 72-bit (with link ECC) buses, and the 82-FBGA footprint supports dense soldered-down layouts on the line card. The 1.1V rail simplifies power-tree design from a card-level 12V or 48V feed via point-of-load regulators. Performance consideration: at multi-gigabit data rates, CA bus stub length and on-die termination settings dominate timing margin - run signal-integrity simulation against the Samsung CA compliance mask before committing the PCB stackup.
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AI Accelerator Memory Buffers
AI accelerator cards and smart-NIC boards use DDR5 SDRAM as high-bandwidth working memory alongside HBM, offloading model parameters, activation buffers, and data staging. The K4RBH086VB-BCWM's second-generation B-die family targets the higher DDR5 data rates these accelerators require; at 5600 Mbps-class operation, one x8 channel delivers over 5 GB/s per component, and eight components per channel reach 40+ GB/s. Samsung DDR5's on-die link ECC improves reliability for long-running training jobs where uncorrected errors would waste GPU-days of compute. Thermal design is the main constraint: sustained memory traffic keeps junction temperatures high, so accelerator boards typically use heatspreaders and forced airflow over the DRAM row. Verify the platform memory controller's supported speed bin against the official Samsung datasheet.
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Industrial Embedded Computing
Industrial PCs, factory automation controllers, and edge AI gateways moving from DDR4 to DDR5 platforms solder down discrete DDR5 die like the K4RBH086VB-BCWM rather than using modules, saving height and improving vibration reliability. The 1.1V operation reduces system power - Samsung advertises roughly 30% better efficiency than DDR4 - which helps fanless industrial enclosures stay within thermal budgets. The 0-85 C operating range documented by Elite Memory Solutions covers standard industrial ambient conditions (extended-temperature screening would need separate ordering codes). The common 82-FBGA footprint also lets industrial OEMs second-source across Samsung's A-die and H-die families (K4RAH/K4RHE) without PCB respin. Design consideration: DDR5 memory training time at cold boot should be validated against the controller's watchdog timeout in field designs.
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Client PC Soldered-Down Memory (LPDDR-style desktop/notebook)
Thin client notebooks, mini-PCs, and SoC-based desktop designs solder DDR5 components such as the K4RBH086VB-BCWM directly on the board to eliminate SO-DIMM connector height and cost, following the memory-down trend in consumer platforms. Eight 16Gb x8 die provide 16GB of system memory on a single 64-bit channel pair, and the 1.1V rail integrates cleanly with the platform PMIC power tree. The JEDEC-standard 82-FBGA ballout shared with all DDR5 discrete vendors gives OEMs multi-vendor sourcing on one PCB footprint - though die-generation and speed-bin differences still require controller retraining validation. Samsung's DDR5 portfolio spans 16Gb to 32Gb densities with speeds up to 7200 Mbps per its product page, giving consumer platforms a clear density and bandwidth roadmap beyond this 16Gb part.
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Test, Measurement and Validation Platforms
DDR5 memory test benches, DIMM slot testers, and silicon-validation platforms use discrete K4RBH086VB-BCWM components on interposer boards to characterize new memory controllers and train algorithms. The B-die family's published compliance masks for the CA/CS receivers - specified in the Samsung 16Gb B-die component datasheet - make this part a convenient golden device for validating controller timing margins in single-data-rate CA mode. The x8 organization exposes standard DQS strobe training (read/write leveling) that mirrors module-level behavior, so results transfer to production DIMM designs. Validation engineers should source units with consistent date codes to minimize die-stepping variance across a test campaign, and confirm the speed bin via the Samsung datasheet rather than distributor abbreviations, since suffix semantics differ across the K4RAH/K4RBH/K4RHE families.
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추천 제품 요약
엔지니어링 참조 데이터: K4RBH086VB-BCWM — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K4RAH086VB-BCWM | K4RAH086VP-BCWM | K4RBH086VM-BCWM | K4RHE086VB-BCWM | K4RHE165VB-BCWM |
|---|---|---|---|---|---|---|
| Package | 82-FBGA | 82-FBGA - same | 82-FBGA - same | 82-FBGA - same | 82-FBGA - same | 82-FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 1G x 16 |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Operating Temperature | 0 C to 85 C | 0 C to 85 C | 0 C to 85 C | 0 C to 85 C | 0 C to 85 C | 0 C to 85 C |
| Lifecycle Status | Mass Production (active) | Mass Production (48840 pcs stock Aug 2026) | Mass Production (46750 pcs stock Aug 2026) | Active (orderable at WIN SOURCE) | Active | Active |
주요 차별점
- Second-generation B-die family for higher DDR5 speed bins (vs K4RAH086VB-BCWM)
- Mainstream x8 organization maximizes DIMM bus utilization (vs K4RBH046VM-BCWM)
- Trade-off: H-die sibling may offer longer supply runway (vs K4RHE086VB-BCWM)
설계 노트
DDR5 CA/CS lines operate in single-data-rate mode with defined voltage and timing compliance masks per the Samsung 16Gb B-die component datasheet. Route CA as a fly-by bus with daisy-chained termination, keep DQ/DQS groups length-matched within the controller vendor's skew budget, and avoid stub transitions between reference planes. Simulate the CA mask at the target data rate pre-layout; DDR5 timing budgets are tighter than DDR4 at equivalent topologies and hard-coded DDR4 ODT values will fail training.
The K4RBH086VB-BCWM runs from a 1.1V VDD per the DDR5 specification, with separate VDDQ and VPP domains. In module designs the on-module PMIC generates and sequences these rails; in soldered-down designs use a JEDEC DDR5-compliant PMIC and follow its recommended sequencing order to avoid latch-up during power cycles. Budget current for simultaneous background refresh at maximum temperature, and place bulk plus high-frequency ceramic decoupling at each DRAM VDD ball cluster to control di/dt droop during burst accesses.
Do not assume that the same 82-FBGA footprint guarantees interchangeability across die generations: K4RAH (A/B-die), K4RBH and K4RHE (H-die) parts are pin-compatible but differ in speed bin and training behavior, so controller firmware must be re-validated with the substituted die. Also, verify the exact speed grade from the official Samsung datasheet - distributor snippets occasionally mislabel families (one listing described the K4RAH sibling as 'DDR3 1066 MT/s', which is clearly erroneous). Always qualify with memory training and burn-in on the target platform.
규정 준수 정보
Compliance status not stated in captured distributor data; obtain Samsung's official material declaration from semiconductor.samsung.com before regulatory sign-off.
