K4RAH086VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung
부품 번호: K4RAH086VB-BCQK ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $70.3125 | $70.31 |
| 10 | $50.7813 | $507.81 |
| 100 | $44.9219 | $4,492.19 |
| 500 | $42.9688 | $21,484.40 |
| 1,000 | $41.0156 | $41,015.60 |
K4RAH086VB-BCQK 개요
DDR5 SDRAM is the fifth generation of Double Data Rate synchronous dynamic random-access memory, a volatile memory technology at the top of the DRAM hierarchy under the broader memory IC and semiconductor storage taxonomy. Compared to DDR4, DDR5 doubles the bank groups, lowers the per-rail operating voltage to 1.1 V, and moves power management onto the module via an integrated PMIC 5100 controller, improving both bandwidth and power efficiency. Samsung states DDR5 delivers up to 7200 Mbps across the family and roughly 30% greater power efficiency than DDR4.
Key features of this device include the 16 Gb density in a 2G x 8 organization, 4800 Mbps pin speed, 1.1 V core supply, on-die ECC for improved data reliability, and the compact FBGA-82 ball-grid-array package used on DIMMs, soldered-down memory subsystems, and embedded computing modules. The BCQK speed-grade suffix denotes the commercial temperature, 4800 Mbps bin within the K4RAH0x6VB B-die family.
Technically, the K4RAH086VB-BCQK operates in DLL-enabled mode as described in the Samsung datasheet; command/address (CA) and chip select inputs use a defined compliance mask for voltage and timing and run in single-data-rate mode. Internal bank architecture and refreshed operation follow the DDR5 device operation datasheet, which covers features common across Samsung DDR5 devices.
Typical applications include servers, AI acceleration hardware, high-performance computing systems, industrial controllers, computing modules, and consumer electronics requiring efficient reliable memory, as reported by distributor product listings for this part.
Design-wise, verify motherboard trace length matching, reference voltages, and the CA bus compliance mask, and confirm PMIC sequencing on your platform, since DDR5 power delivery differs fundamentally from DDR4 designs.
This page synthesizes distributor stock and pricing references, drop-in alternatives from the same Samsung DDR5 family plus a SK Hynix equivalent, and practical design notes not found in the manufacturer datasheet.
드롭인 대체품: K4RAH086VB-BCQK — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K4RAH086VB-BCWM
✓ 재고 있음
$44.5455 / 개
데이터시트 보기 →K4RAH086VB-BIQK
✓ 재고 있음
$4.25 / 개
데이터시트 보기 →K4RAH086VB-BIWM
✓ 재고 있음
$4.85 / 개
데이터시트 보기 →K4RAH086VE-BCWM
✓ 재고 있음
$7.6 / 개
데이터시트 보기 →K4RAH086VP-BCWM
✓ 재고 있음
가격 문의
데이터시트 보기 →H5CG48MEBDX014N
✓ 재고 있음
$41.68 / 개
데이터시트 보기 →K4RAH086VB-BCQK 사양
| 메모리 유형 | DDR5 SDRAM (Volatile DRAM) |
| 메모리 크기 | 16 Gb |
| Memory Organization | 2G x 8 |
| 데이터 속도 | 4800 Mbps |
| 공급 전압 | 1.1 V |
| 인터페이스 | Parallel |
| Technology | DDR5 |
| ECC | On-die ECC |
| 패키지 | FBGA-82 |
| 실장 유형 | Surface Mount |
| Product Status | Active |
| Operating Mode | DLL Enabled mode |
| Series | K4RAH0x6VB (DDR5 16Gb B-die family) |
| Packaging | Tray |
K4RAH086VB-BCQK fbga-82 핀 구성 가이드
K4RAH086VB-BCQK(fbga-82 패키지)의 핀 구성입니다. 핀 번호, 기능, 연결 다이어그램은 제조사 데이터시트에 정의되어 있습니다. 정확한 풋프린트와 솔더링 지침은 해당 문서를 참조하십시오.
다음에 대한 상세 핀아웃 데이터 없음: K4RAH086VB-BCQK.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
K4RAH086VB-BCQK 적합 용도: 6 애플리케이션s: Server Memory Subsystems, AI Acceleration Hardware, High-Performance Computing (HPC), Industrial Controllers and Embedded Computing, Consumer DDR5 Memory Modules (UDIMM/SODIMM), Firmware Boot, Embedded Logging and Replacement Sourcing.
Server Memory Subsystems
The K4RAH086VB-BCQK fits server main memory because its 4800 Mbps data rate and 2G x 8 organization map directly onto standard 64-bit DDR5 channels used in RDIMM and solder-down server designs. On-die ECC reduces soft-error driven corrections at the cell level, complementing platform side-band ECC required in servers. Deployed between the memory controller and the 1.1 V PMIC-managed power tree, the device provides 16 Gb per chip, so a single-rank 16 GB module needs eight devices. Performance consideration: at 4800 Mbps per pin, a 64-bit channel delivers roughly 38.4 GB/s aggregate bandwidth before controller overhead, so trace-length matching and CA compliance-mask adherence are mandatory.
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AI Acceleration Hardware
AI training and inference cards use the K4RAH086VB-BCQK as host-side and accelerator-attached DDR5 memory where HBM cost must be contained. The 16 Gb density per FBGA-82 device lets AI module designers place high capacity beside the accelerator, and the 1.1 V rail with DDR5 on-module PMIC reduces board power-tree complexity versus DDR4. Because AI workloads are bandwidth hungry, the 4800 Mbps pin speed yields approximately 38.4 GB/s per 64-bit channel; designers typically instantiate multiple channels. Use the DDR5 controller training engine to compensate for dense routing, and verify thermals since sustained AI traffic keeps DRAM near maximum activation currents.
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High-Performance Computing (HPC)
HPC nodes benefit from the K4RAH086VB-BCQK's balance of density, bandwidth, and efficiency. DDR5's doubled bank groups and 4800 Mbps operation improve effective bandwidth for streaming workloads common in scientific computing, while the 1.1 V supply and ~30% power efficiency gain over DDR4 (per Samsung) cut node-level energy cost, a dominant HPC operating expense. A dual-channel desktop-class node using eight devices reaches 16 GB; server platforms scale to terabytes. Design consideration: on-die ECC improves reliability for long-running jobs, but cluster-level error handling should still assume platform ECC since on-die ECC does not replace link or controller ECC.
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Industrial Controllers and Embedded Computing
Industrial controllers and COM Express/SMARC computing modules use the K4RAH086VB-BCQK for main memory where DDR5 chipsets are deployed. The FBGA-82 surface-mount package supports solder-down designs that survive vibration better than socketed SO-DIMMs, and distributor overviews explicitly list industrial controllers among target uses. The industrial-temperature sibling K4RAH086VB-BIQK covers harsh environments. At 4800 Mbps, embedded designers should budget careful length-matched routing and reference-plane integrity on 6-8 layer boards; the 1.1 V core rail simplifies the PMIC selection versus DDR4's 1.2 V plus termination rails.
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Consumer DDR5 Memory Modules (UDIMM/SODIMM)
The K4RAH086VB-BCQK die family ships inside retail DDR5 modules: EE Times identified Samsung K4RAH086VB-class devices (K4RAH046VB die) inside the G.SKILL Trident Z5 DDR5 kit, a PC5-4800 UDIMM. This makes the component the correct rework part for module repair and reballing, and repair kits listing K4RAH086VB-BCQK are commercially available. DDR5 modules integrate a PMIC (5100 class) on-module, so a single replaced device must match both the JEDEC DDR5 ball map and the module's serial-presence-detect programmed vendor data for full compatibility.
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Firmware Boot, Embedded Logging and Replacement Sourcing
Beyond main memory, the K4RAH086VB-BCQK serves volatile working-memory roles in firmware boot staging, embedded logging buffers, and computing modules, as summarized in the datasheets.globalspec product overview. In logging applications, DDR5's on-die ECC protects buffered telemetry before it is flushed to non-volatile storage such as Samsung NAND (e.g., K9-family parts). The 2G x 8 organization provides 256 MB of working space per device, and the 4800 Mbps rate ensures log bursts do not throttle the host CPU. For replacement sourcing, the same FBGA-82 footprint across the K4RAH086VB family simplifies second-sourcing in long-life embedded programs.
추천
추천 제품 요약
엔지니어링 참조 데이터: K4RAH086VB-BCQK — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K4RAH086VB-BCWM | K4RAH086VB-BIWM | K4RAH086VE-BCWM | H5CG48MEBDX014N |
|---|---|---|---|---|---|
| Package | FBGA-82 | FBGA-82 - same | FBGA-82 - same | FBGA-82 - same | FBGA-82 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | SK Hynix |
| Memory Size | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Memory Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| ECC | On-die ECC | On-die ECC | On-die ECC | On-die ECC | On-die ECC (DDR5 standard) |
| Lifecycle Status | Active | Active | Active | Active | Active |
주요 차별점
- 4800 Mbps speed grade with broad module deployment (vs K4RAH086VB-BCWM)
- Industrial temperature availability in the same footprint (vs K4RAH086VB-BIWM)
- On-die ECC versus DDR4 predecessors like K4A8G165WB (vs K4A8G165WB-BCWE)
설계 노트
Route the DDR5 command/address bus as fly-by topology with length matching per the Samsung K4RAH0x6VB Rev 1.0 specification. The CA and CS input receivers are specified with a defined voltage/timing compliance mask and run in single-data-rate mode, so verify eye masks at 4800 Mbps on your stackup. Keep DQ/DQS length mismatch within the controller's training capture window and simulate reflections on the 1.1 V rail terminations before committing the PCB.
DDR5 moves power management from the motherboard voltage regulator to the module PMIC. For solder-down K4RAH086VB-BCQK designs, you supply the 1.1 V VDD rail directly, so implement proper sequencing, bulk decoupling near each device, and per-ball via fanout for the VDD/VDDQ planes. Estimated: at typical DDR5 device currents in the hundreds of mA range per device at 4800 Mbps, a 16-device subsystem needs a multi-amp rail with low-ESR ceramic bulk capacitance; verify against the datasheet IDD tables for your exact operating pattern.
Do not assume DDR4 drop-in compatibility: DDR5 changes signaling, bank architecture, and power delivery fundamentally, and a DDR4 controller cannot train this device. When substituting speed bins (BCQK vs BCWM/BIWM), the board will function at the slower common speed, but re-run BIOS memory training and margin testing. Beware counterfeit/remarked FBGA-82 DRAM in the open market; buy through authorized channels with lot traceability, as Sourcengine and LimChip emphasize for this part.
규정 준수 정보
Compliance data was not present in the provided web data. Samsung DRAM products are typically RoHS compliant, but this must be confirmed from the official Samsung product page or certificate before design-in.
