K4RHE086VB-BCWM - 24Gb DDR5 5600Mbps DRAM | Samsung
부품 번호: K4RHE086VB-BCWM ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $9.8 | $9.80 |
| 10 | $9.2 | $92.00 |
| 100 | $8.6 | $860.00 |
| 500 | $8.1 | $4,050.00 |
| 1,000 | $7.65 | $7,650.00 |
K4RHE086VB-BCWM 개요
DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random-access memory) is the fifth generation of JEDEC-defined DDR memory, sitting at the top of the DRAM hierarchy that spans DDR3, DDR4, and DDR5 generations. Compared with DDR4, DDR5 doubles the bank groups, moves the power management onto the DIMM or module, and delivers roughly 30% greater power efficiency, making it the dominant memory class for servers and premium computing platforms.
Key features of this device include the 24Gb density per die, a 2G x 8 organization suited to wide server memory subsystems, and a 5600 Mbps pin speed that supports DDR5-4400/4800/5600 class memory controllers. Samsung specifies a 1.1V core supply in line with the DDR5 standard, reducing per-bit energy versus the 1.2V of DDR4.
Architecturally, the K4RHE086VB-BCWM belongs to Samsung's DDR5 DRAM family using advanced process technology with on-die ECC and other DDR5 reliability features. The 82-ball FBGA (Fine-Pitch Ball Grid Array) surface-mount package provides low inductance signal paths needed for multi-gigabit operation.
Typical applications include data center server DIMMs, premium desktop PCs, professional workstations, and industrial systems requiring long-term memory availability.
Design consideration: memory controllers must be configured for the 24Gb density and x8 organization; BIOS or memory-training firmware must support this density, as some older controllers cap out at 16Gb per die.
This page synthesizes distributor stock, drop-in family alternatives, and practical integration notes not found on the manufacturer product page.
드롭인 대체품: K4RHE086VB-BCWM — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K4RHE086VB-BCWM (동일 폼 팩터 및 풋프린트) — 차이점: Package, Data Rate, Operating Temperature, Interface, Density.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K4RAH086VB-BCWM
✅ 드롭인✓ 재고 있음
$44.5455 / 개
데이터시트 보기 →K4RAH086VP-BCWM
✅ 드롭인✓ 재고 있음
가격 문의
데이터시트 보기 →K4RAH086VB-BIWM
✅ 드롭인✓ 재고 있음
$4.85 / 개
데이터시트 보기 →K4RAH086VB-BCQK
✅ 드롭인✓ 재고 있음
$41.0156 / 개
데이터시트 보기 →K4RAH086VE-BCWM
✅ 드롭인✓ 재고 있음
$7.6 / 개
데이터시트 보기 →K4RAH086VB-BIQK
✅ 드롭인✓ 재고 있음
$4.25 / 개
데이터시트 보기 →K4RAH086VB-BCQK
✅ 드롭인✓ 재고 있음
$41.0156 / 개
데이터시트 보기 →K4RHE086VB-BCWM 최대 정격 & 전기적 특성
| 메모리 유형 | DDR5 SDRAM |
| Density | 24 Gb |
| 메모리 구성 | 2G x 8 |
| 데이터 속도 | 5600 Mbps |
| 공급 전압 | 1.1 V |
| 패키지 | 82 FBGA |
| 실장 유형 | Surface Mount |
| 인터페이스 | DDR5 (JEDEC) |
| Configuration | x8 |
| Application Segment | Server / Data Center / Premium PC |
| Manufacturer | Samsung Semiconductor |
| RoHS 상태 | unknown |
K4RHE086VB-BCWM 82 fbga 핀 구성 가이드
K4RHE086VB-BCWM(82 fbga 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: K4RHE086VB-BCWM.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
K4RHE086VB-BCWM 적합 용도: 6 애플리케이션s: Data Center Server Memory, Premium Desktop PCs, Professional Workstations, Industrial Systems Requiring Long-Term Availability, Networking and Communication Equipment, Embedded and Edge AI Computing.
Data Center Server Memory
The K4RHE086VB-BCWM fits data center server DIMM designs where the 24Gb (2G x 8) density enables 3GB per chip, allowing RDIMM capacities up to 33% higher than 16Gb-based modules at the same chip count. Its 5600 Mbps data rate supports DDR5-5600-class server memory controllers from current Intel Xeon and AMD EPYC platforms, while the 1.1V supply aligns with DDR5 on-DIMM power management for improved efficiency. Placed as the core DRAM device on RDIMM or LRDIMM assemblies, it delivers the bandwidth and capacity cloud and enterprise workloads demand; designers must validate controller training firmware for 24Gb dies and follow Samsung DDR5 layout guidance for fly-by routing and decoupling.
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Premium Desktop PCs
In premium desktop platforms, the K4RHE086VB-BCWM provides 24Gb per device at 5600 Mbps, letting UDIMM makers build high-capacity consumer modules (for example 48GB with 16 chips) without increasing device count. The 1.1V DDR5 operation cuts module power versus DDR4, benefiting thermally constrained small-form-factor gaming and creator PCs, and the x8 organization keeps the address/command bus loading favorable for two-DIMM-per-channel desktop topologies. The 82-FBGA package supports the dense ball-out breakout typical of consumer DIMM PCBs. Integrators should confirm the platform BIOS supports 24Gb die training, since early DDR5 desktop firmware generations capped at 16Gb per die.
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Professional Workstations
Professional workstation memory subsystems benefit from the K4RHE086VB-BCWM's combination of 24Gb density and 5600 Mbps bandwidth: content-creation, CAD, and simulation workloads are frequently memory-capacity bound, and 3GB-per-chip density maximizes capacity within standard ECC UDIMM/RDIMM footprints. The 1.1V supply reduces steady-state module heat, improving acoustic and thermal margins in quiet workstation enclosures. Samsung positions this DDR5 generation specifically for professional workstations alongside data centers, per distributor product descriptions. Validation points include ECC operation in the platform memory controller, 24Gb-aware training code, and signal-integrity sign-off for four-DIMM, two-channel configurations at DDR5-5600.
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Industrial Systems Requiring Long-Term Availability
Industrial controllers, edge servers, and networking appliances that specify DDR5 benefit from the K4RHE086VB-BCWM where long-term supply continuity is a procurement requirement: SourceMemoryChips notes this part is widely deployed in industrial systems where long-term availability is required, and independent distributors held 17400-29650 pieces in stock through mid-2026. The 5600 Mbps rate gives headroom for future CPU refreshes on the same board, and 1.1V operation eases industrial power-supply design. Same-family 16Gb siblings (K4RAH086 series) provide drop-in-footprint fallbacks if the 24Gb density is EOL'd first. Buyers should negotiate last-time-buy terms and qualify both densities in the design phase.
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Networking and Communication Equipment
Routers, switches, and 5G infrastructure line cards require high-bandwidth buffering memory, and the K4RHE086VB-BCWM's 5600 Mbps x8 interface supplies the packet-buffer and lookup-table capacity such designs need. The 24Gb density reduces chip count per board, cutting BOM cost and ball-field routing complexity on dense line-card PCBs, while DDR5's improved power efficiency lowers the thermal budget of fanless or constrained networking hardware. When designing the memory subsystem, engineers should follow the platform vendor's fly-by routing rules, maintain length-matched byte lanes, and provision the 1.1V rail with low-impedance decoupling across the 82-FBGA array to sustain multi-gigabit signaling margins.
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Embedded and Edge AI Computing
Edge AI accelerators and high-performance embedded modules increasingly adopt DDR5 for model and frame-buffer memory. The K4RHE086VB-BCWM provides 3GB per device, allowing COM Express, SMARC, or custom carrier boards to reach 12-24GB of soldered-down memory with only 4-8 chips, preserving board area for NPUs and power circuitry. The 1.1V rail suits battery-backed and fanless edge enclosures, and 5600 Mbps sustains the bandwidth needed for real-time inference pipelines. Design teams must ensure the SoC memory controller supports 24Gb x8 DDR5 dies and should validate training at the target temperature range, leveraging Samsung's same-package 16Gb parts as capacity-flexible alternates.
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추천 제품 요약
엔지니어링 참조 데이터: K4RHE086VB-BCWM — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K4RAH086VB-BCWM | K4RAH086VP-BCWM | K4RAH086VB-BIWM | K4RAH086VE-BCWM |
|---|---|---|---|---|---|
| Package | 82 FBGA | 82 FBGA - same | 82 FBGA - same | 82 FBGA - same | 82 FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 24 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 2G x 8 | x8 (16Gb) | x8 (16Gb) | x8 (16Gb) | x8 (16Gb) |
| Data Rate | 5600 Mbps | 5600 Mbps | 5600 Mbps | 5600 Mbps | 5600 Mbps |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Memory Generation | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Capacity per Chip | 3 GB | 2 GB | 2 GB | 2 GB | 2 GB |
주요 차별점
- Highest density in the 82-FBGA DDR5 family: 24Gb per die (vs K4RAH086VB-BCWM)
- Same speed class as the 16Gb siblings (vs K4RAH086VE-BCWM)
- Different package from the x16 sibling (vs K4RHE165VB-BCWM)
설계 노트
At 5600 Mbps, DDR5 signal margins depend heavily on fly-by command/address routing and byte-lane length matching within the 82-FBGA breakout. Follow the platform vendor memory layout guideline (Intel/AMD server design guides) for DQ/DQS intra-byte skew of a few mils and matched CA fly-by stubs. DDR5 relies on decision-feedback equalization (DFE) on-die and controller-side training; ensure your firmware runs full read/write leveling per Samsung DDR5 application guidance. Estimated: even 10 mm of un-matched stub at 5600 Mbps (UI ~179 ps) can consume a significant fraction of the eye budget.
The K4RHE086VB-BCWM operates from a 1.1V rail per the DDR5 standard. Provision the 1.1V PDN with bulk capacitance at the PMIC and distributed low-ESL ceramic decoupling across the 82-ball array. DDR5 modules use on-DIMM 12V-to-1.1V power management ICs; for soldered-down designs select a DDR5-certified PMIC. Samsung states DDR5 delivers roughly 30% better power efficiency than DDR4, but idle and self-refresh currents still dominate in servers - enable per-bank refresh and power-down features in the controller to realize this efficiency.
The most common integration failure is controller training firmware that does not recognize 24Gb dies. The K4RHE086VB-BCWM is a 24Gb (2G x 8) device; early DDR5 platforms trained only to 16Gb. Update BIOS/memory-training code and verify the platform memory QVL before committing to this density. Also, do not substitute the x16 sibling K4RHE165VB-BCWM on an x8 board - it uses a 106-ball package and a different ballout, and is not footprint-compatible despite the same 24Gb capacity and speed class.
Break out the 82-FBGA ball field using via-in-pad or dog-bone fanout per Samsung DDR5 package layout recommendations, keeping DQ escape lengths balanced within each byte lane. Use at least one solid reference plane adjacent to the signal layers and avoid splitting the return path under DQ/DQS routing. Place the DRAM within the controller's specified flight-time window when multiple ranks are populated, since write-leveling compensates but cannot remove gross topological mismatch.
규정 준수 정보
Compliance data was not present in the provided verified web data. Samsung DDR5 components are generally RoHS-compliant but this must be confirmed from the official Samsung product page or datasheet before design-in.
