K4B4G1646F-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
부품 번호: K4B4G1646F-BYK0 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $2.52 | $2.52 |
| 10 | $2.35 | $23.50 |
| 100 | $2.1 | $210.00 |
| 500 | $1.95 | $975.00 |
| 1,000 | $1.8 | $1,800.00 |
K4B4G1646F-BYK0 개요
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the memory hierarchy in computing systems, serving as the main system memory for processors, and is widely used in laptops, servers, and embedded systems.
Key features include a 4Gb density, 16-bit I/O width, 96-ball FBGA package, and support for 1.35V and 1.5V operation. The device offers a burst length of 8 and 4, programmable CAS latency, and on-die termination. It also includes auto precharge, self-refresh, and power-down modes for energy efficiency.
The K4B4G1646F-BYK0 uses a high-performance CMOS process and features a pseudo-open-drain interface. It supports a wide operating temperature range of 0°C to 95°C (TC) and is RoHS compliant. The device is designed for reliable operation in demanding environments, with a typical refresh period of 7.8 us at 85°C.
Typical applications include DDR3L memory modules for laptops, all-in-one PCs, and embedded systems, as well as networking equipment, industrial computers, and automotive infotainment systems. Its low voltage and high density make it ideal for power-sensitive designs.
When designing with this device, ensure proper decoupling and signal integrity practices, including matched trace lengths and termination resistors, to achieve reliable high-speed operation.
드롭인 대체품: K4B4G1646F-BYK0 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K4B4G1646F-BYK0 (동일 폼 팩터 및 풋프린트) — 차이점: Data Rate, Operating Temperature, Package, Burst Length, Supply Voltage.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K4B4G1646E-BYK0
✅ 드롭인✓ 재고 있음
$1.8 / 개
데이터시트 보기 →K4B4G1646D-BYK0
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$2.9 / 개
데이터시트 보기 →K4B4G1646E-BCMA
✅ 드롭인✓ 재고 있음
$3.7734 / 개
데이터시트 보기 →MT41K256M16HA-125:A1
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
H5TC4G63AFR-PBA
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$3.9773 / 개
데이터시트 보기 →K4B4G1646F-BYK0 최대 정격 & 전기적 특성
| 메모리 유형 | DDR3L SDRAM |
| 메모리 크기 | 4 Gb |
| Memory Organization | 256M x 16 |
| 공급 전압 | 1.35V / 1.5V |
| 데이터 속도 | 1866 Mbps |
| Clock Frequency | 933 MHz |
| 패키지 | 96-ball FBGA |
| 동작 온도 | 0°C to 95°C (TC) |
| 인터페이스 | Parallel |
| Burst Length | 8 and 4 |
| CAS 레이턴시 | Programmable |
| On-Die Termination | Yes |
| ZQ Calibration | Yes |
| Auto Precharge | Yes |
| Self-Refresh | Yes |
| RoHS | Compliant |
K4B4G1646F-BYK0 핀 구성
| 핀 A1 | VDD — Power supply |
| 핀 A2 | DQ0 — Data input/output 0 |
| 핀 A3 | DQ1 — Data input/output 1 |
| 핀 A4 | VSS — Ground |
| 핀 A5 | DQ2 — Data input/output 2 |
| 핀 A6 | DQ3 — Data input/output 3 |
| 핀 A7 | VDD — Power supply |
| 핀 A8 | DQ4 — Data input/output 4 |
| 핀 A9 | DQ5 — Data input/output 5 |
| 핀 A10 | VSS — Ground |
| 핀 A11 | DQ6 — Data input/output 6 |
| 핀 A12 | DQ7 — Data input/output 7 |
일반적인 애플리케이션
K4B4G1646F-BYK0 적합 용도: 6 애플리케이션s: Laptop Memory, Embedded Systems, Networking Equipment, Automotive Infotainment, Industrial PCs, Servers.
Laptop Memory
The K4B4G1646F-BYK0 is ideal for laptop memory modules (SO-DIMM) due to its low 1.35V operation, reducing power consumption and extending battery life. Its 4Gb density allows 8GB modules with 16 chips, and the 1866 Mbps data rate supports modern processors. The FBGA package enables compact module designs, and the wide temperature range ensures reliability in portable devices.
추천
Embedded Systems
In embedded systems, the K4B4G1646F-BYK0 provides high-density memory for applications like industrial controllers and networking equipment. Its 1.35V operation reduces heat generation, and the 96-ball FBGA package is suitable for space-constrained PCBs. The device supports standard DDR3L features like ZQ calibration and on-die termination, simplifying design. Its 0-95°C range covers most industrial environments.
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Networking Equipment
The K4B4G1646F-BYK0 is used in routers, switches, and firewalls for packet buffering and routing tables. Its high bandwidth (1866 Mbps) and low latency support high-throughput data processing. The 1.35V supply reduces power in always-on equipment, and the FBGA package offers good thermal performance. The device's reliability and long lifecycle make it suitable for infrastructure deployments.
추천
Automotive Infotainment
In automotive infotainment systems, the K4B4G1646F-BYK0 provides memory for navigation, media playback, and connectivity. Its 1.35V operation reduces power draw from the vehicle's electrical system, and the 0-95°C range covers cabin temperature extremes. The FBGA package withstands vibration, and the high data rate supports smooth graphics. Samsung's automotive-grade variants are available for stricter requirements.
추천
Industrial PCs
The K4B4G1646F-BYK0 is used in industrial PCs for factory automation and process control. Its 4Gb density allows large memory footprints for data logging and HMI applications. The 1.35V supply reduces heat in sealed enclosures, and the wide temperature range ensures operation in harsh environments. The device's long availability supports extended product lifecycles common in industrial equipment.
추천
Servers
In entry-level servers, the K4B4G1646F-BYK0 is used in UDIMM modules for cost-effective memory expansion. Its 1866 Mbps data rate supports dual-channel configurations, and the 1.35V operation reduces data center power consumption. The FBGA package allows high-density modules, and the device's reliability is critical for 24/7 operation. ECC variants are available for error correction.
추천
추천 제품 요약
엔지니어링 참조 데이터: K4B4G1646F-BYK0 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K4B4G1646E-BYK0 | K4B4G1646D-BYK0 | MT41K256M16HA-125:A1 | H5TC4G63AFR-PBA |
|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Memory Size | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V / 1.5V | 1.35V / 1.5V | 1.35V / 1.5V | 1.35V / 1.5V | 1.35V / 1.5V |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| Operating Temperature | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
주요 차별점
- Low voltage operation (1.35V) (vs Standard DDR3 parts at 1.5V)
- High density 4Gb in 16-bit organization (vs 2Gb parts like K4B2G1646F-BYK0)
- Samsung F-die revision (vs E-die (K4B4G1646E-BYK0))
설계 노트
For high-speed DDR3L routing, maintain 50-ohm single-ended impedance and 100-ohm differential impedance for DQS signals. Keep trace lengths matched within 50 mils for address/command and 25 mils for data groups. Use ground planes beneath the FBGA to minimize noise.
Decouple VDD and VDDQ with 0.1uF and 1uF capacitors placed close to the balls. Use a dedicated power plane for VDDQ to reduce noise. The 1.35V supply should be stable within +/-5% to ensure reliable operation.
The FBGA package dissipates heat through the solder balls and PCB. Ensure adequate thermal vias under the package to conduct heat to inner layers. For high ambient temperatures, consider airflow or heatsinks to keep TC below 95°C.
규정 준수 정보
RoHS compliance confirmed from datasheet. Other compliance data not available.
