K4S510432D-UC75T00 - 512Mb SDRAM 133MHz TSOP II | Samsung
부품 번호: K4S510432D-UC75T00 ✗ 단종| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $4.95 | $4.95 |
| 10 | $4.45 | $44.50 |
| 100 | $3.95 | $395.00 |
| 500 | $3.55 | $1,775.00 |
| 1,000 | $3.2 | $3,200.00 |
K4S510432D-UC75T00 개요
SDRAM is a type of DRAM that synchronizes its interface with the system clock bus, allowing burst-mode transfers at the full clock rate rather than asynchronous access delays. Within the memory hierarchy, SDRAM sits above asynchronous fast-page-mode and EDO DRAM and below DDR generations, making it the cornerstone memory technology for embedded systems of the late 1990s through 2000s. The x4 organization of this device makes it suitable for wide memory word construction via byte/wide chip interleaving.
Key features include a 133 MHz clock rate at CAS Latency 3, LVTTL-compatible inputs and outputs, fully synchronous operation to the positive clock edge, internal four-bank architecture enabling interleaved accesses, and burst lengths of 1, 2, 4, 8, or full page with sequential or interleave burst type. Programmable CAS latency and mode register configuration give designers flexibility in bus timing.
The D-die generation uses a CMOS process with JEDEC-standard 54-pin TSOP II footprint and 0.8 mm pin pitch. Auto-refresh and self-refresh modes, with 4096 refresh cycles per 64 ms interval, preserve data integrity in both powered operation and low-power suspend states.
Typical applications include industrial control systems, networking and telecom equipment, test instruments, legacy embedded designs, and replacement repair of 133 MHz SDRAM bus designs where DDR memory is not pin-compatible.
Design consideration: ensure the printed circuit board follows the manufacturer's datasheet guidance for clock routing and decoupling - SDRAM is sensitive to clock skew and VDDQ noise at 133 MHz operation.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
드롭인 대체품: K4S510432D-UC75T00 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K4S510432D-UC75T00 (동일 폼 팩터 및 풋프린트) — 차이점: RoHS Status, CAS Latency, Memory Type, Package, Technology.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K4S510432D-UC750
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
K4S510432D-UC7
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
K4S510432D-UC60
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
K4S510432D-UC70
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
K4S281632D-UC75
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
K4S510432D-UC75T00 최대 정격 & 전기적 특성
| 메모리 유형 | SDRAM - Synchronous DRAM |
| 메모리 크기 | 512 Mbit |
| 메모리 구성 | 128M x 4 |
| Clock Frequency | 133 MHz |
| Access Time | 65 ns |
| CAS 레이턴시 | 3 (at 133 MHz) |
| Supply Voltage Range | 3.0 V to 3.6 V |
| I/O Interface | LVTTL |
| Bank Architecture | 4 banks |
| Burst Length | 1, 2, 4, 8, full page |
| Refresh | Auto-refresh and self-refresh |
| 패키지 | 54-TSOP II |
| 실장 유형 | Surface Mount |
| Technology | CMOS, D-die generation |
| RoHS 상태 | Compliant |
K4S510432D-UC75T00 54-tsop ii 핀 구성 가이드
K4S510432D-UC75T00(54-tsop ii 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: K4S510432D-UC75T00.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
K4S510432D-UC75T00 적합 용도: 6 애플리케이션s: Legacy Embedded Systems, Industrial Control Systems, Networking and Telecom Equipment, Test and Measurement Instruments, Board-Level Repair and Obsolescence Management, Graphics and Video Frame Buffers.
Legacy Embedded Systems
The K4S510432D-UC75T00 provides 512Mbit of main memory for legacy embedded processors that integrate an SDR SDRAM controller - such as ARM7/ARM9-based SoCs, PowerPC microcontrollers, and MIPS cores of the PC133 era. Its 133 MHz CL3 timing matches the typical 100-133 MHz bus clock of these controllers, and its LVTTL 3.3V interface connects directly without level shifting. With four banks and burst lengths up to full page, the device sustains high sequential bandwidth for code execution from RAM. Because the part is EOL, designers maintaining these platforms should secure last-time-buy stock or validate the pin-compatible K4S510432D-UC750 equivalent before the broker supply depletes. The 54-TSOP II footprint allows replacement on existing PCBs without rework.
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Industrial Control Systems
Industrial PLCs, motor drives, and HMI controllers from the 2000s frequently use 128M x 4 SDRAM for frame buffers, logging buffers, and program memory. The K4S510432D-UC75T00 fits these roles with its industrial-grade 3.0V-3.6V tolerance band, which absorbs supply variation on factory 3.3V rails, and its self-refresh mode that retains data during controller reset or low-power standby. The 65 ns access time and 133 MHz clock support deterministic memory access timing required in real-time control loops. Its RoHS-compliant TSOP II package meets current manufacturing requirements for service replacements. For harsh environments, verify the operating temperature requirement against the datasheet before substitution, since this commercial-grade part is not automotive qualified.
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Networking and Telecom Equipment
Ethernet switches, routers, and T1/E1 line cards of the SDRAM generation used x4-organized SDRAM to build wide memory banks for packet buffers and forwarding tables. The K4S510432D-UC75T00's 133 MHz operation with programmable CAS latency 3 lets the memory controller tune bus timing for multiple devices on a shared bus. Its full-page burst mode maximizes throughput for streaming packet data, while the interleaved four-bank architecture hides precharge latency during round-robin packet scheduling. Wide buses built from eight x4 chips achieve 32- or 64-bit data paths with the shared 54-TSOP II footprint simplifying layout. Decoupling and controlled-impedance routing per Samsung application guidance are essential at 133 MHz multi-drop operation.
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Test and Measurement Instruments
Oscilloscopes, logic analyzers, and data-acquisition systems require deep capture memory with guaranteed sequential write bandwidth. The K4S510432D-UC75T00 delivers 133 MHz synchronous writes with burst lengths up to full page, sustaining streaming acquisition rates when combined with FIFO buffering. Its x4 organization permits wide 32/64-bit capture buses assembled from parallel chips, increasing samples-per-transfer. The 65 ns access time defines random-read latency when the host processor retrieves acquisition windows. Designers of new instruments should not adopt this EOL part, but service organizations repairing installed instruments can use it as a direct replacement since the 54-TSOP II package and JEDEC SDRAM command set are unchanged across the product family.
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Board-Level Repair and Obsolescence Management
Maintenance organizations supporting avionics-adjacent, medical, and long-lifecycle industrial equipment face recurring failures of EOL SDRAM. The K4S510432D-UC75T00 serves as the canonical replacement for failed 128M x 4 PC133 devices on legacy boards. Its JEDEC-standard 54-TSOP II footprint and standard SDRAM mode register command set mean no firmware or PCB changes are required - desolder the failed device, clean the pads, and reflow the replacement. Because the part is discontinued, stock authenticity is a concern: source from reputable distributors (DigiKey, Ampheo) rather than gray-market brokers, and verify date codes and marking consistency on receipt. Keep at least a projected ten-year demand quantity on hand given finite supply.
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Graphics and Video Frame Buffers
Early LCD controllers and video scalers used SDRAM as frame-buffer memory, and many are still in service in commercial displays, kiosks, and signage players. The K4S510432D-UC75T00's x4 organization lets designers build wide banks matching 16- or 32-bit pixel interfaces, while full-page burst reads sustain the sequential scan-out bandwidth demanded by video refresh: a 1024x768 @ 60 Hz stream requires roughly 47 MB/s, comfortably within the device's 133 MHz x 4-bit-per-clock burst capability when organized in parallel. Its four banks allow ping-pong buffering between write-in and read-out banks, eliminating tearing. The 3.3V LVTTL interface matches the typical logic levels of these controllers directly.
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추천 제품 요약
엔지니어링 참조 데이터: K4S510432D-UC75T00 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K4S510432D-UC750 | K4S510432D-UC7 | K4S510432D-UC60 | K4S510432D-UC70 | K4S281632D-UC75 |
|---|---|---|---|---|---|---|
| Package | 54-TSOP II | 54-TSOP II - same | 54-TSOP II - same | 54-TSOP II - same | 54-TSOP II - same | 54-TSOP II - same (different pin function) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Size | 512 Mbit | 512 Mbit | 512 Mbit | 512 Mbit | 512 Mbit | 512 Mbit |
| Organization | 128M x 4 | 128M x 4 | 128M x 4 | 128M x 4 | 128M x 4 | 16M x 8 - different |
| Clock Frequency | 133 MHz | 133 MHz | 133 MHz | 100 MHz | 143 MHz | 133 MHz |
| CAS Latency | CL3 | CL3 | CL3 | CL2 | CL3 | CL3 |
| Supply Voltage | 3.0 V to 3.6 V | 3.0 V to 3.6 V | 3.0 V to 3.6 V | 3.0 V to 3.6 V | 3.0 V to 3.6 V | 3.0 V to 3.6 V |
| Pin-to-Pin Compatibility | Reference | Yes - drop-in | Yes - drop-in | Yes - drop-in (timing derated) | Yes - drop-in (faster) | No - different x8 pin function |
주요 차별점
- 133 MHz PC133 speed class with CL3 (vs K4S510432D-UC60)
- Identical footprint across speed grades enables second-sourcing (vs K4S510432D-UC750)
- Headroom above specification (vs K4S510432D-UC70)
설계 노트
At 133 MHz, the SDRAM address/control and data buses must be routed as controlled-impedance traces (typically 50 ohm single-ended) with length matching per the memory controller's skew budget. Use series source termination (22-33 ohm) on clock and strobe lines to damp reflections at the multi-drop TSOP II loads. Keep the clock trace as the longest matched line, and avoid routing SDRAM signals near switching power converter inductors to prevent coupled jitter that violates setup/hold margins.
Provide per-device decoupling of at least four 0.1uF X7R ceramics at the VDD/VDDQ pins plus one 10uF bulk capacitor per SDRAM cluster. SDRAM peak core currents during bank-activate can cause VDD droop that triggers undefined states, so keep the power plane solid under the memory island. Estimated: an idle-heavy workload drawing ~5 mA base plus refresh activity keeps total supply current low, but full-page bursts at 133 MHz can drive transient currents of tens of mA per device - budget regulator headroom accordingly.
Do not substitute the x8-organized K4S281632D for this x4 part despite the shared 54-TSOP II physical footprint - the pin functions differ and the design will fail. Also, when replacing a failed device, execute a mode register set (MRS) command during controller initialization; a mode register in an unknown power-on state can cause garbage reads even on a good chip. Confirm the controller's refresh interval programming satisfies the 4096-cycle/64 ms requirement before qualifying a replacement supplier batch.
규정 준수 정보
RoHS compliance per distributor package data (datasheets.com listing: ROHS COMPLIANT, TSOP2-54). Not AEC-Q100 qualified - this is a commercial-grade memory IC. Other compliance attributes not stated in verified data.
