K6X0808C1D-GF70000 - 256Kbit 5V SRAM 70ns | Samsung | 28-SOP
부품 번호: K6X0808C1D-GF70000 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.66 | $16.60 |
| 100 | $1.42 | $142.00 |
| 500 | $1.25 | $625.00 |
| 1,000 | $1.1 | $1,100.00 |
K6X0808C1D-GF70000 개요
A static RAM is a type of volatile semiconductor memory that stores each bit in a bistable latch circuit, retaining data as long as power is applied without any refresh cycle requirement. Within the memory IC hierarchy, SRAM sits alongside DRAM and nonvolatile memory (EEPROM, Flash), and is prized for its simple parallel interface, deterministic fast access times, and zero refresh overhead, making it a classic choice for embedded CPU buffers, caches, and scratchpad memory.
Key features of the K6X0808C1D family include low-power advanced CMOS process technology, TTL-compatible input and output levels, a fully asynchronous parallel address/data interface (no clock required), and the 70ns speed grade indicated by the -GF70 speed code. The family is offered in multiple operating temperature ranges and package options per Samsung's datasheet, giving designers layout flexibility.
Technically, the device uses a 15-bit address bus (A0-A14) to select one of 32,768 byte locations, with chip enable (CE), output enable (OE), and write enable (WE) control lines implementing standard asynchronous SRAM timing. The tri-state 8-bit I/O bus connects directly to microprocessor data buses.
Typical applications include industrial control systems, automotive electronics, legacy communication equipment, and test instruments that require byte-wide scratchpad RAM with simple 5V logic interfacing.
Design consideration: because this is a 5V part, level shifting is required when interfacing with 3.3V microcontrollers; also verify the 28-SOP footprint matches wide-body SOIC-28 land patterns.
This page synthesizes distributor availability data, drop-in alternative analysis, and practical design notes not found in the manufacturer datasheet.
드롭인 대체품: K6X0808C1D-GF70000 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K6X0808C1D-GF70000 (동일 폼 팩터 및 풋프린트) — 차이점: Technology, Data Bus Width, Access Time, Memory Type, Package.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K6X0808C1D-BF70T
✅ 드롭인✓ 재고 있음
$1.05 / 개
데이터시트 보기 →K6X0808C1D-GF55000
✅ 드롭인✓ 재고 있음
$3.2 / 개
데이터시트 보기 →K6X0808C1D-BF55
✅ 드롭인✓ 재고 있음
$1.85 / 개
데이터시트 보기 →K6X0808C1D-GF70000 사양
| 메모리 유형 | SRAM - Asynchronous |
| 메모리 크기 | 256 Kbit |
| 메모리 구성 | 32K x 8 bit |
| 인터페이스 | Parallel |
| Access Time | 70 ns |
| Supply Voltage - Min | 4.5 V |
| Supply Voltage - Max | 5.5 V |
| Technology | Low Power CMOS |
| Address Bus Width | 15 bit (A0-A14) |
| 데이터 버스 폭 | 8 bit (tri-state I/O) |
| Control Signals | CE, OE, WE |
| Input/Output Levels | TTL compatible |
| 패키지 | 28-SOP |
| 실장 유형 | Surface Mount |
K6X0808C1D-GF70000 핀 구성
| 핀 1 | A14 — Address input bit 14 |
| 핀 2 | A12 — Address input bit 12 |
| 핀 3 | A7 — Address input bit 7 |
| 핀 4 | A6 — Address input bit 6 |
| 핀 5 | A5 — Address input bit 5 |
| 핀 6 | A4 — Address input bit 4 |
| 핀 7 | A3 — Address input bit 3 |
| 핀 8 | A2 — Address input bit 2 |
| 핀 9 | A1 — Address input bit 1 |
| 핀 10 | A0 — Address input bit 0 |
| 핀 11 | I/O1 — Data input/output bit 1 |
| 핀 12 | I/O2 — Data input/output bit 2 |
| 핀 13 | I/O3 — Data input/output bit 3 |
| 핀 14 | GND — Ground |
| 핀 15 | I/O4 — Data input/output bit 4 |
| 핀 16 | I/O5 — Data input/output bit 5 |
| 핀 17 | I/O6 — Data input/output bit 6 |
| 핀 18 | I/O7 — Data input/output bit 7 |
| 핀 19 | I/O8 — Data input/output bit 8 |
| 핀 20 | CE — Chip enable (active low) |
| 핀 21 | A10 — Address input bit 10 |
| 핀 22 | OE — Output enable (active low) |
| 핀 23 | A11 — Address input bit 11 |
| 핀 24 | A9 — Address input bit 9 |
| 핀 25 | A8 — Address input bit 8 |
| 핀 26 | A13 — Address input bit 13 |
| 핀 27 | WE — Write enable (active low) |
| 핀 28 | VCC — Power supply, 4.5V to 5.5V |
일반적인 애플리케이션
K6X0808C1D-GF70000 적합 용도: 6 애플리케이션s: Industrial Control Systems, Automotive Electronics, Test and Measurement Instruments, Legacy Communication Equipment, Embedded System Main Memory, Battery-Backed Data Retention.
Industrial Control Systems
In PLCs, motor controllers, and factory automation nodes, the K6X0808C1D-GF70000 serves as byte-wide working RAM for setpoint tables, PID loop variables, and event logs. Its 70ns access time comfortably keeps pace with 8-bit and 16-bit industrial microcontrollers running at tens of MHz, while the fully asynchronous CE/OE/WE interface requires no memory controller timing tuning. The 4.5V-5.5V supply matches the 5V logic rails standard on legacy industrial backplanes, and the low-power CMOS core keeps standby consumption minimal for always-on equipment. The 28-SOP surface-mount package withstands vibration better than DIP alternatives, supporting long service life on factory floors. Note that its data is volatile, so battery backup or NVSRAM pairing is needed for power-fail data retention.
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Automotive Electronics
Legacy automotive ECUs, instrument clusters, and body-control modules used 5V SRAM like the K6X0808C1D-GF70000 for adaptive parameter storage, fault-code buffers, and intermediate signal-processing scratchpads. The 70ns access time is sufficient for crankshaft-speed calculations and sensor averaging loops in older 5V MCU platforms, and the TTL-compatible I/O connects directly to era-appropriate processors with no level shifting. Its 32K x 8 organization matches byte-oriented ECU data structures exactly. The surface-mount 28-SOP package suits conformally coated under-hood electronics, though designers must confirm the temperature range option in the ordering code meets their zone requirement, as this standard grade is not an AEC-Q100-qualified device by default.
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Test and Measurement Instruments
Bench multimeters, oscilloscope auxiliary memories, and data loggers use the K6X0808C1D-GF70000 as fast acquisition scratchpad memory. The 70ns address-to-data delay supports waveform-sampling architectures that capture 8-bit samples at multi-MHz effective rates, and the deterministic asynchronous timing simplifies FPGA or microprocessor bus interfacing without refresh scheduling jitter. Its tri-state I/O bus allows multiple memory devices to share a single 8-bit data path, enabling banked memory expansion in 5V instrument designs. The low-power CMOS process reduces internal heating in sealed bench enclosures. For new designs, engineers typically pair the SRAM with a 5V-tolerant FPGA or use level translators when the host logic runs at 3.3V.
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Legacy Communication Equipment
Telecom line cards, modems, and network controllers from the 5V era rely on parts like the K6X0808C1D-GF70000 for packet buffers, call-state tables, and configuration scratchpads. The 256Kbit capacity holds typical framing buffers for serial and early LAN protocols, while the 70ns access time supports line-rate processing for interfaces up to several Mbit/s. Because the pinout follows the industry-standard 32K x 8 SRAM map, field-repair and continuity-of-supply programs can substitute same-family parts without PCB respins, which is critical for systems with 20-plus-year service commitments. The 28-SOP footprint is widely second-sourced for spare-board manufacture. Designers should confirm RoHS status of the specific ordering code for any rework into lead-free assemblies.
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Embedded System Main Memory
General-purpose 8-bit and 16-bit embedded systems built around 5V MCUs use the K6X0808C1D-GF70000 as external main or overlay memory. A 15-bit address bus and byte-wide data bus connect directly to standard MCU expansion ports, and the CE/OE/WE control lines implement standard asynchronous bus cycles with no configuration registers or clocks. The 70ns speed grade meets the wait-state-free timing of most 5V microcontrollers up to roughly 16-25 MHz system clocks. Low CMOS standby current suits battery-backed or sleep-heavy applications, and the surface-mount 28-SOP package allows compact two-layer board layouts. For designs needing code storage as well, engineers typically add parallel Flash alongside the SRAM rather than relying on volatile memory alone.
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Battery-Backed Data Retention
Applications requiring data to survive power loss pair the K6X0808C1D-GF70000 with a lithium coin cell and a supervisor IC that switches CE high (deselect) as VCC falls, leveraging the low-power CMOS data-retention mode of the K6X0808C1D family. Typical retention currents for 5V low-power CMOS SRAMs are in the microamp range, allowing years of retention from a small cell, though the exact standby figure for this part should be taken from the Samsung K6X0808C1D datasheet rather than assumed. This architecture persists meters reading, calibration constants, and audit logs in utility and payment equipment without EEPROM wear concerns. The 70ns access time restores full-speed operation instantly on power-up, faster than Flash re-read architectures.
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추천 제품 요약
엔지니어링 참조 데이터: K6X0808C1D-GF70000 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K6X0808C1D-BF70T | K6X0808C1D-GF55000 | K6X0808C1D-BF55 |
|---|---|---|---|---|
| Package | 28-SOP | 28-SOP - same | 28-SOP - same | 28-SOP - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Organization | 32K x 8 (256 Kbit) | 32K x 8 (256 Kbit) | 32K x 8 (256 Kbit) | 32K x 8 (256 Kbit) |
| Access Time | 70 ns | 70 ns | 55 ns | 55 ns |
| Supply Voltage | 4.5 V to 5.5 V | 4.5 V to 5.5 V | 4.5 V to 5.5 V | 4.5 V to 5.5 V |
| Interface | Parallel (CE/OE/WE) | Parallel (CE/OE/WE) | Parallel (CE/OE/WE) | Parallel (CE/OE/WE) |
| Drop-in Compatible | - | Yes - pin-to-pin | Yes - pin-to-pin | Yes - pin-to-pin |
주요 차별점
- True 5V CMOS operation without level shifting (vs K6X0808C1D-BF70T)
- 70ns speed grade balances cost and timing margin (vs K6X0808C1D-GF55000)
- Industry-standard 32Kx8 pinout enables continuation supply (vs K6X0808C1D-BF55)
설계 노트
The K6X0808C1D-GF70000 is a 5V TTL-interface device. When connecting to 3.3V MCUs or FPGAs, verify that every connected input is 5V tolerant; otherwise insert series resistors with clamping or a dedicated level translator (e.g., a 74LVC245 direction-controlled bus transceiver). Keep the 15-line address bus length-matched loosely - at 70ns timing, standard two-layer PCB routing under 15cm introduces negligible skew, but avoid routing address lines parallel to switching power traces.
Decouple VCC (pin 28) to GND (pin 14) with a 0.1uF ceramic capacitor placed within 5mm of the package, plus one 4.7uF-10uF bulk capacitor per SRAM bank. The 28-SOP footprint generally matches the industry-standard wide SOIC-28 land pattern used for 32Kx8 SRAMs - verify the body width option (300 vs 330 mil class) in the Samsung ordering code against your land pattern before tape-out.
Do not substitute the K6X1008C2D (128Kx8) or K6X4008C1F (4Kx8) on the same footprint - their densities change address pin assignments and they are NOT drop-in compatible despite the family similarity. For write cycles, ensure WE meets the datasheet write-pulse width and that CE and WE never assert simultaneously with OE low during a write, which would cause bus contention. Estimated: at 5V and typical CMOS SRAM operating currents of a few tens of milliamps, power dissipation is well under 200mW, so no thermal copper pour is needed.
규정 준수 정보
The K6X0808C1D is a legacy 5V SRAM; the provided web data does not state RoHS/REACH/lead-free status for this ordering code. Verify compliance certificates with Samsung or the distributor before lead-free assembly.
