K4A8G165WG-BCWE - 8Gb DDR4 SDRAM x16 3200Mbps | Samsung
부품 번호: K4A8G165WG-BCWE ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $50.625 | $50.63 |
| 10 | $36.5625 | $365.63 |
| 100 | $32.3438 | $3,234.38 |
| 500 | $30.9375 | $15,468.75 |
| 1,000 | $29.5313 | $29,531.30 |
K4A8G165WG-BCWE 개요
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, succeeding DDR3. It achieves higher speed and lower power consumption through a 1.2V operating voltage, a 16n prefetch architecture, and improved signal integrity with on-die termination (ODT) and data bus inversion (DBI). DDR4 is a volatile memory technology, meaning data is lost when power is removed, and it is widely used as main memory in computers, servers, and embedded systems where high bandwidth and capacity are critical.
Key features of the K4A8G165WG-BCWE include a 3200 Mbps data rate, 8Gb density, and a 512M x 16 organization. The device supports a temperature range of 0°C to +85°C and has a typical operating current of 20mA (per LCSC data). It uses a 1.2V supply, reducing power consumption by approximately 25% compared to DDR3L. The 96-ball FBGA package enables compact PCB layouts and is compatible with standard DDR4 DIMM and embedded designs.
Technically, the K4A8G165WG-BCWE is part of Samsung's B-die family, known for good overclocking headroom and stable performance. It supports standard DDR4 features such as burst length 8 (BL8), on-die termination, and programmable CAS latency. The device is designed for high-speed signaling with a 19ns typical row cycle time (tRC) and supports 3200 Mbps operation with a 1.2V VDD. The memory interface is parallel, with 16 data lines (DQ) and address/command pins, making it suitable for direct connection to memory controllers in SoCs and CPUs.
Typical applications include high-performance computing, servers, networking switches, and industrial embedded systems. The 8Gb density and x16 organization make it ideal for systems requiring moderate capacity with a wide data bus, such as network processors and FPGA-based designs. Its 3200 Mbps speed supports bandwidth-intensive workloads like data analytics and real-time processing.
When designing with this device, ensure proper decoupling with 0.1uF and 1uF capacitors near the VDD and VDDQ pins, and follow the layout guidelines in the datasheet for signal integrity at 3200 Mbps. The device requires a stable 1.2V supply and a reference voltage (VREF) for the command/address bus. Thermal management is important; the operating temperature range is 0°C to +85°C, so adequate airflow or heatsinking may be needed in high-density systems.
드롭인 대체품: K4A8G165WG-BCWE — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K4A8G165WG-BCWE (동일 폼 팩터 및 풋프린트) — 차이점: Package, Memory Type, Clock Frequency, Memory Size, Data Rate.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K4A8G165WC-BCWE
✓ 재고 있음
$38 / 개
데이터시트 보기 →K4A8G165WB-BCTD
✓ 재고 있음
$37 / 개
데이터시트 보기 →K4A8G165WB-BCWE
✓ 재고 있음
$6.55 / 개
데이터시트 보기 →MT40A1G8WE-075E
✓ 재고 있음
$11.9 / 개
데이터시트 보기 →H5AN8G6NDJR-UHC
✓ 재고 있음
$34.6 / 개
데이터시트 보기 →NT6AN8T6WBJ1B1
✓ 재고 있음
$8.75 / 개
데이터시트 보기 →K4A8G165WG-BCWE 최대 정격 & 전기적 특성
| 메모리 유형 | DDR4 SDRAM |
| 메모리 크기 | 8 Gbit |
| Memory Organization | 512M x 16 |
| 데이터 속도 | 3200 Mbps |
| 공급 전압 | 1.2 V |
| 동작 온도 범위 | 0°C to +85°C |
| Operating Current | 20 mA |
| 패키지 | FBGA-96 |
| 실장 유형 | Surface Mount |
| Memory Interface | Parallel |
| Row Cycle Time (tRC) | 19 ns |
| Technology | B-die |
| RoHS 상태 | Compliant |
| Lead-Free | Yes |
| 수명 주기 상태 | Active |
K4A8G165WG-BCWE 핀 구성
| 핀 A1 | VDD — Power supply (1.2V) |
| 핀 A2 | DQ0 — Data input/output 0 |
| 핀 A3 | DQ1 — Data input/output 1 |
| 핀 B1 | VSS — Ground |
| 핀 B2 | DQ2 — Data input/output 2 |
| 핀 B3 | DQ3 — Data input/output 3 |
| 핀 C1 | VDDQ — I/O power supply (1.2V) |
| 핀 C2 | DQ4 — Data input/output 4 |
| 핀 C3 | DQ5 — Data input/output 5 |
| 핀 D1 | VSSQ — I/O ground |
| 핀 D2 | DQ6 — Data input/output 6 |
| 핀 D3 | DQ7 — Data input/output 7 |
| 핀 E1 | VDD — Power supply (1.2V) |
| 핀 E2 | DQS0 — Data strobe 0 |
| 핀 E3 | DQS0# — Data strobe 0 complement |
| 핀 F1 | VSS — Ground |
| 핀 F2 | A0 — Address input 0 |
| 핀 F3 | A1 — Address input 1 |
| 핀 G1 | VDDQ — I/O power supply (1.2V) |
| 핀 G2 | A2 — Address input 2 |
| 핀 G3 | A3 — Address input 3 |
| 핀 H1 | VSSQ — I/O ground |
| 핀 H2 | A4 — Address input 4 |
| 핀 H3 | A5 — Address input 5 |
| 핀 J1 | VDD — Power supply (1.2V) |
| 핀 J2 | A6 — Address input 6 |
| 핀 J3 | A7 — Address input 7 |
| 핀 K1 | VSS — Ground |
| 핀 K2 | A8 — Address input 8 |
| 핀 K3 | A9 — Address input 9 |
| 핀 L1 | VDDQ — I/O power supply (1.2V) |
| 핀 L2 | A10 — Address input 10 |
| 핀 L3 | A11 — Address input 11 |
| 핀 M1 | VSSQ — I/O ground |
| 핀 M2 | A12 — Address input 12 |
| 핀 M3 | A13 — Address input 13 |
| 핀 N1 | VDD — Power supply (1.2V) |
| 핀 N2 | BA0 — Bank address 0 |
| 핀 N3 | BA1 — Bank address 1 |
| 핀 P1 | VSS — Ground |
| 핀 P2 | BA2 — Bank address 2 |
| 핀 P3 | RAS# — Row address strobe |
| 핀 R1 | VDDQ — I/O power supply (1.2V) |
| 핀 R2 | CAS# — Column address strobe |
| 핀 R3 | WE# — Write enable |
| 핀 T1 | VSSQ — I/O ground |
| 핀 T2 | CS# — Chip select |
| 핀 T3 | CKE — Clock enable |
| 핀 U1 | VDD — Power supply (1.2V) |
| 핀 U2 | CK — Clock |
| 핀 U3 | CK# — Clock complement |
| 핀 V1 | VSS — Ground |
| 핀 V2 | ODT — On-die termination |
| 핀 V3 | RESET# — Reset |
일반적인 애플리케이션
K4A8G165WG-BCWE 적합 용도: 6 애플리케이션s: Server Memory, Networking Equipment, Industrial Embedded Systems, Consumer Electronics, Automotive Infotainment, FPGA-Based Prototyping.
Server Memory
The K4A8G165WG-BCWE provides 8Gb density and 3200 Mbps speed, making it ideal for server main memory where high bandwidth and capacity are critical. Its 1.2V operation reduces power consumption in data centers, and the x16 organization allows flexible memory configurations. When used in RDIMM or SODIMM modules, it supports high-performance computing workloads such as database processing and virtualization. The 19ns tRC ensures efficient row activation, and the B-die technology offers stable performance under heavy load. Designers should ensure proper signal integrity with controlled impedance traces and adequate decoupling to maintain data integrity at 3200 Mbps.
추천
Networking Equipment
In networking switches and routers, the K4A8G165WG-BCWE provides high-speed packet buffering and forwarding tables. Its 3200 Mbps data rate supports line-rate processing, and the 8Gb capacity allows large routing tables. The 1.2V supply reduces heat generation in dense line cards, and the FBGA-96 package enables compact PCB layouts. The device's parallel interface connects directly to network processors, and its 19ns tRC ensures low latency for packet lookups. Engineers should place the memory close to the processor to minimize trace lengths and use proper termination to avoid reflections at high speeds.
추천
Industrial Embedded Systems
The K4A8G165WG-BCWE is suitable for industrial embedded systems requiring reliable, high-speed memory. Its 0°C to +85°C operating range covers most industrial environments, and the 8Gb density supports complex applications like machine vision and real-time control. The 1.2V operation reduces power consumption in power-constrained designs, and the FBGA-96 package is robust for vibration-prone environments. The device's 3200 Mbps speed enables fast data acquisition and processing. Designers should ensure adequate thermal management, as the operating temperature range is limited, and use conformal coating if the system is exposed to harsh conditions.
추천
Consumer Electronics
In high-end consumer devices like gaming consoles and set-top boxes, the K4A8G165WG-BCWE provides the memory bandwidth needed for smooth graphics and multitasking. Its 3200 Mbps speed supports 4K video processing and gaming, while the 8Gb capacity allows multiple applications to run simultaneously. The 1.2V supply is efficient for battery-powered devices, and the FBGA-96 package is compact for slim designs. The B-die technology offers good overclocking headroom for enthusiasts. Designers should consider the thermal profile, as consumer devices may have limited airflow, and ensure proper PCB layout for signal integrity.
추천
Automotive Infotainment
The K4A8G165WG-BCWE can be used in automotive infotainment systems for navigation, media playback, and connectivity. Its 8Gb density supports complex user interfaces, and the 3200 Mbps speed ensures responsive performance. The 0°C to +85°C range is suitable for cabin environments, and the 1.2V operation reduces heat in enclosed spaces. The FBGA-96 package is compact for dashboard integration. However, for automotive-grade requirements, consider AEC-Q100 qualified parts. Designers should ensure the memory meets automotive reliability standards and use proper ESD protection on the interface.
추천
FPGA-Based Prototyping
The K4A8G165WG-BCWE is commonly used with FPGAs for prototyping high-speed digital systems. Its 3200 Mbps data rate matches the capabilities of modern FPGA transceivers, and the 8Gb capacity provides ample storage for test vectors and data buffers. The parallel interface connects directly to FPGA I/O banks, and the 1.2V supply is compatible with FPGA power rails. The FBGA-96 package is easy to route on multi-layer PCBs. Designers should use the FPGA's memory controller IP to simplify integration and ensure timing closure at 3200 Mbps. Proper decoupling and signal integrity are critical for reliable operation.
추천
추천 제품 요약
엔지니어링 참조 데이터: K4A8G165WG-BCWE — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K4A8G165WC-BCWE | K4A8G165WB-BCTD | MT40A1G8WE-075E | H5AN8G6NDJR-UHC |
|---|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 | FBGA-96 | FBGA-96 | FBGA-96 |
| Brand | Samsung Semiconductor | Samsung Semiconductor | Samsung Semiconductor | Micron Technology | SK Hynix |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Memory Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 2666 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C |
주요 차별점
- 3200 Mbps data rate for high bandwidth (vs K4A8G165WB-BCTD)
- B-die technology for overclocking (vs MT40A1G8WE-075E)
- Same-brand drop-in compatibility (vs H5AN8G6NDJR-UHC)
설계 노트
The K4A8G165WG-BCWE requires a stable 1.2V supply for VDD and VDDQ. Use a low-noise LDO or a switching regulator with proper filtering to minimize ripple. Place 0.1uF and 1uF ceramic capacitors close to each VDD and VDDQ pin, and a bulk capacitor (10uF) near the power entry point. Ensure the power plane has low impedance to handle transient currents during read/write operations.
For 3200 Mbps DDR4 signaling, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command lines. Keep trace lengths matched within +/- 10 mils for each byte lane. Use a solid ground plane beneath the memory area and avoid splitting planes. Place the memory close to the controller to minimize stub lengths. Follow the layout guidelines in the Samsung datasheet for optimal signal integrity.
The K4A8G165WG-BCWE operates up to +85°C, so ensure adequate cooling in high-density designs. The FBGA-96 package dissipates heat through the PCB; use thermal vias under the package to conduct heat to inner ground planes. In systems with limited airflow, consider adding a heatsink or forced air cooling. Monitor the junction temperature to avoid exceeding the maximum rating.
규정 준수 정보
RoHS compliance inferred from distributor listings; REACH and conflict minerals not specified in provided data.
