MT40A512M16TD-062E - 8Gb DDR4 SDRAM 512Mx16 1.2V | Micron
부품 번호: MT40A512M16TD-062E ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $84.375 | $84.38 |
| 10 | $60.9375 | $609.38 |
| 100 | $53.9062 | $5,390.62 |
| 500 | $51.5625 | $25,781.25 |
| 1,000 | $49.2188 | $49,218.80 |
MT40A512M16TD-062E 개요
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, effectively doubling the data rate relative to the internal clock. It is the successor to DDR3, offering higher speeds, lower operating voltage (1.2V vs 1.5V), and improved signal integrity. DDR4 is a critical component in modern computing systems, including servers, desktops, laptops, and embedded systems, where it serves as the main system memory.
Key features of the MT40A512M16TD-062E include a 1.2V power supply, a 16-bit data bus, and support for data rates up to 3200 MT/s. It features programmable data strobe preambles, on-die termination (ODT), and a temperature-compensated self-refresh (TCSR) mode. The device also supports burst length of 8 (BL8) and burst chop of 4 (BC4), enabling flexible data access patterns.
Technically, the MT40A512M16TD-062E utilizes Micron's advanced DRAM process technology, achieving high density and low power consumption. Its 16n prefetch architecture allows high-speed data transfer while maintaining internal core speeds. The device also features programmable read latency (RL) and write latency (WL), allowing system designers to optimize timing for their specific memory controller.
Typical applications for this DDR4 SDRAM include server and data center memory modules, high-performance computing (HPC) systems, networking equipment, and advanced embedded systems. Its high density and speed make it ideal for applications requiring large memory capacity and fast data throughput, such as cloud computing, artificial intelligence, and real-time analytics.
When designing with this device, ensure proper signal integrity by following Micron's layout guidelines, including controlled impedance traces and adequate decoupling capacitors. The device requires a stable 1.2V supply and a separate VPP supply of 2.5V for wordline boost. Careful attention to thermal management is also recommended.
This page synthesizes distributor pricing, drop-in alternatives across Micron, Alliance Memory, Nanya, ISSI and Samsung, and practical design notes not found in the manufacturer datasheet.
드롭인 대체품: MT40A512M16TD-062E — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MT40A512M16TB-062E:R
✓ 재고 있음
$60 / 개
데이터시트 보기 →MT40A512M16LY-062E AAT:E
✓ 재고 있음
$9.2 / 개
데이터시트 보기 →MT40A512M16TD-062E AUT:R
✓ 재고 있음
$3.9 / 개
데이터시트 보기 →AS4C512M16D4A-62BCN
✓ 재고 있음
$7.2 / 개
데이터시트 보기 →NT5AD512M16A4-HR
✓ 재고 있음
$8.1 / 개
데이터시트 보기 →IS43QR16512B-062AABL
✓ 재고 있음
$8.1 / 개
데이터시트 보기 →K4A8G165WC-BCWE
✓ 재고 있음
$38 / 개
데이터시트 보기 →MT40A512M16TD-062E AAT:R
📋 참조 대체품 (카탈로그에 없음)
MT40A512M16TD-062E 최대 정격 & 전기적 특성
| 메모리 유형 | DDR4 SDRAM (volatile DRAM) |
| 메모리 크기 | 8 Gbit |
| Memory Organization | 512M x 16 |
| 데이터 속도 | 3200 MT/s (DDR4-3200) |
| Clock Frequency | 1600 MHz |
| Access Time | 19 ns |
| Supply Voltage (VDD) | 1.2 V |
| VPP Supply | 2.5 V |
| 인터페이스 | Parallel |
| 패키지 | 96-ball FBGA (7.5 x 13 mm) |
| 실장 유형 | Surface Mount |
| Burst Length | BL8 / BC4 |
| 특징 | Programmable data strobe preambles, ODT, TCSR |
| Temperature Grade | Commercial (0C to +85C); AUT/AIT/AAT variants available |
MT40A512M16TD-062E 96-ball fbga (7.5 x 13 mm) 핀 구성 가이드
MT40A512M16TD-062E(96-ball fbga (7.5 x 13 mm) 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: MT40A512M16TD-062E.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
MT40A512M16TD-062E 적합 용도: 6 애플리케이션s: Server and Data Center Memory, Networking and Communication Equipment, Industrial and Embedded Systems, Automotive ADAS and Infotainment, Test and Measurement Instrumentation, High-Performance Computing and AI Accelerators.
Server and Data Center Memory
In servers and data center platforms, the MT40A512M16TD-062E provides 8 Gbit of main memory per component at 3200 MT/s over a 16-bit bus, allowing high-capacity RDIMM/NVDIMM and mezzanine memory designs to scale by populating multiple x16 components per channel. Its 1.2V core supply cuts DRAM power roughly 20% versus DDR3 at similar bandwidth, which directly reduces data center cooling costs. The device's ODT and programmable data strobe preambles maintain signal integrity on heavily loaded multi-rank buses. Placed on registered modules, each component sustains full DDR4-3200 bandwidth while TCSR self-refresh protects data during thermal excursions typical of dense server chassis.
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Networking and Communication Equipment
Routers, switches, and 5G baseband cards use the MT40A512M16TD-062E as packet buffer and forwarding-table memory because a single 96-ball FBGA component delivers a complete 16-bit DDR4 channel at 3200 MT/s (25.6 GB/s per component). The x16 organization is ideal where one or two components suffice, saving board area versus four x8 parts. Network processors with 16-bit DDR4 controllers train directly to the -062 speed bin. Its 19 ns access time supports line-rate packet queuing, while the 2.5V VPP wordline boost sustains refresh reliability in 24/7 carrier-grade operation with high ambient temperatures near the front card exhaust.
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Industrial and Embedded Systems
Industrial PCs, machine-vision controllers, and edge-AI gateways deploy the MT40A512M16TD-062E as main memory for ARM SoCs and x86 embedded processors with 16-bit or 32-bit DDR4 controllers. The commercial TD grade suits controlled factory environments, while the AIT industrial grade covers -40C to +85C requirements with the identical footprint, letting one PCB layout serve both SKUs. At 8 Gbit per component, two parts provide 2 GB in about 200 mm2, fitting compact COM Express and SMARC modules. The device's programmable read/write latency lets designers optimize timing against specific SoC memory controllers to maximize margins in electrically noisy factory settings.
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Automotive ADAS and Infotainment
Automotive designs use the MT40A512M16TD-062E AUT:R variant, which is AEC-Q100 qualified per the Arrow listing, for ADAS sensor-fusion ECUs and infotainment head units. The x16 organization pairs naturally with automotive SoCs (for example, 32-bit controllers fed by two components), delivering 51.2 GB/s from a pair at DDR4-3200. The AAT and AIT temperature grades handle under-hood and cabin thermal profiles, and the 96-ball FBGA (7.5 x 13 mm) footprint fits the compact, vibration-tolerant layouts required in vehicles. Because automotive and commercial variants share the identical ball-out, one board design covers multiple trim and regional thermal specifications.
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Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and protocol analyzers require deep capture memory with sustained write bandwidth; the MT40A512M16TD-062E's 3200 MT/s data rate supports 25.6 GB/s per 16-bit component, enabling high sample-depth acquisition architectures. Its 19 ns access time and BL8 burst mode allow contiguous streaming from high-speed ADC front ends into capture buffers. Instrument designers often pair the DDR4 with dedicated memory controllers that leverage programmable data strobe preambles to maintain eye margins across long board traces. The availability of AAT/AUT screened variants also lets instrument vendors standardize on one footprint across commercial and extended-temperature product lines.
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High-Performance Computing and AI Accelerators
HPC nodes and AI accelerator cards use the MT40A512M16TD-062E where GDDR/HBM cannot meet capacity needs or where board cost matters: 8 Gbit per component in a compact FBGA lets designers assemble tens of gigabytes of DDR4 around GPUs, FPGAs, and AI inference ASICs. At 3200 MT/s, four x16 components on a 64-bit controller deliver 102 GB/s peak bandwidth, sufficient for model-weight staging and CPU-side preprocessing. The 1.2V operation keeps the memory subsystem power budget low, and ODT plus programmable preambles preserve timing margins on the long, densely routed traces typical of accelerator PCBs. TCSR supports reliable operation in airflow-constrained accelerator chassis.
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추천 제품 요약
엔지니어링 참조 데이터: MT40A512M16TD-062E — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MT40A512M16TB-062E | MT40A512M16LY-062E AAT | AS4C512M16D4A-62BCN | NT5AD512M16A4-HR | IS43QR16512B-062AABL |
|---|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13) | R: 96-FBGA (7.5x13) - same | E: 96-FBGA (7.5x13) - same | 96-FBGA (7.5x13) - same | 96-FBGA - same JEDEC x16 ball-out | 96-FBGA - same |
| Brand | Micron Technology | R: Micron Technology | E: Micron Technology | Alliance Memory | Nanya Technology | ISSI |
| Memory Size | 8 Gbit | R: 8 Gbit | E: 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | R: 512M x 16 | E: 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 MT/s | R: 3200 MT/s | E: 3200 MT/s | 3200 MT/s | 2666 MT/s (verify speed bin) | 3200 MT/s |
| Supply Voltage | 1.2 V (VDD), 2.5 V (VPP) | R: 1.2 V / 2.5 V | E: 1.2 V / 2.5 V | 1.2 V / 2.5 V | 1.2 V / 2.5 V | 1.2 V / 2.5 V |
주요 차별점
- Fastest widely available speed bin in the x16 family (vs NT5AD512M16A4-HR)
- Full automotive temperature and AEC-Q100 options on the same footprint (vs AS4C512M16D4A-62BCN)
- Newer die revision with documented equivalence (vs MT40A512M16TB-062E:R)
설계 노트
Route the 3200 MT/s DDR4 address/command and data bus per Micron's DDR4 layout guidelines: fly-by topology for address/command with length-matched stubs, and point-to-point data groups length-matched to the associated DQS pair within +/-10 mils. Control trace impedance to 40 ohms single-ended / 80 ohms differential and reference data lines to a solid ground plane. Keep the 96-ball FBGA within 50 mm of the controller where possible to preserve timing margins at DDR4-3200.
Provide two rails: 1.2V VDD and 2.5V VPP. Decouple each supply with bulk capacitance (22-47 uF) plus multiple 0.1 uF and 0.01 uF ceramics placed directly under the FBGA ball field. VPP draws little average current but must never droop below the datasheet minimum during simultaneous write bursts. Follow the datasheet power-up sequencing (VPP/VDD before CK assertion) and implement ZQ calibration with a precise 240-ohm +/-1% resistor to ground.
Estimated: at DDR4-3200 with sustained traffic, an 8 Gb DDR4 component typically dissipates on the order of 0.5-1 W depending on activity mix. The 96-ball FBGA (7.5 x 13 mm) relies on PCB copper for heat spreading, so use at least 2 oz outer copper with thermal vias beneath the package in airflow-constrained enclosures. Verify junction temperature against the derating requirements, and consider enabling TCSR for passive thermal events.
Do not mix die revisions (TD vs TB vs LY) within the same memory rank without validating controller training across all variants, as ODT and drive-strength calibration tables may differ subtly between die generations. Also confirm the speed bin supported by your memory controller before substituting Nanya or Samsung parts, whose speed-bin naming differs from Micron's -062/-075 scheme.
규정 준수 정보
Micron current-production DDR4 components are offered in RoHS-compliant lead-free packages per distributor listings; the AUT variant is AEC-Q100 qualified (this TD commercial grade is not). Obtain formal CoC documents from the Micron part-detail page for the exact orderable suffix.
