IS43QR16512B-062AABL - 8Gb DDR4 SDRAM 512Mx16 | ISSI
부품 번호: IS43QR16512B-062AABL ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.2 | $112.00 |
| 100 | $9.8 | $980.00 |
| 500 | $8.9 | $4,450.00 |
| 1,000 | $8.1 | $8,100.00 |
IS43QR16512B-062AABL 개요
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It uses an 8n prefetch architecture, enabling high-speed data transfer while maintaining lower power consumption through a reduced supply voltage of 1.2V. DDR4 is the industry standard for main memory in servers, desktops, and embedded systems, offering improved speed, density, and reliability over previous generations.
Key features include a 1.2V power supply, 3200 MT/s data rate, 19ns tRCD (RAS-to-CAS delay), and a 96-ball TWBGA package. The device supports on-die termination (ODT), programmable read/write latencies, and auto-refresh and self-refresh modes. It is RoHS compliant and operates over a temperature range of 0°C to +95°C (case temperature).
The IS43QR16512B uses a high-speed CMOS process and an 8n prefetch architecture, which allows two data words to be transferred per clock cycle at the I/O pins. This design achieves high bandwidth while minimizing power consumption. The device includes a mode register for programming various operating modes, including burst length, CAS latency, and test modes. It also supports error correction code (ECC) for enhanced data integrity in critical applications.
Typical applications include high-performance servers, networking equipment (routers, switches), data centers, and industrial computing systems. The high density and speed make it suitable for memory-intensive tasks such as virtualization, real-time analytics, and high-frequency trading. Its low power consumption is beneficial for power-constrained embedded systems.
When designing with this DDR4 SDRAM, ensure proper signal integrity by maintaining controlled impedance traces and using appropriate termination. The device requires a stable 1.2V supply and a separate VTT termination voltage. Follow the manufacturer's layout guidelines for the 96-ball TWBGA package to minimize crosstalk and ensure reliable operation at 3200 MT/s.
드롭인 대체품: IS43QR16512B-062AABL — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IS43QR16512B-062AABL (동일 폼 팩터 및 풋프린트) — 차이점: Data Rate, Package, CAS Latency, Operating Temperature, Interface.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IS43QR16512B-062AABL-TR
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT40A512M16TB-062E
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$60 / 개
데이터시트 보기 →K4A8G165WB-BCWE
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$6.55 / 개
데이터시트 보기 →H5AN8G6NDJR
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$35 / 개
데이터시트 보기 →AS4C512M16D4A-62BCN
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$7.2 / 개
데이터시트 보기 →IS43QR16512B-062AABL 최대 정격 & 전기적 특성
| 메모리 유형 | DDR4 SDRAM |
| 메모리 크기 | 8 Gbit |
| 메모리 구성 | 512M x 16 |
| 공급 전압 | 1.2 V |
| 데이터 속도 | 3200 MT/s |
| CAS 레이턴시 | 22-22-22 |
| tRCD | 19 ns |
| 패키지 | 96-TWBGA (7.5x13.5 mm) |
| 동작 온도 | 0°C to +95°C (case) |
| RoHS | Compliant |
| 실장 유형 | Surface Mount |
| 핀 수 | 96 |
| 인터페이스 | POD (Pseudo Open Drain) |
| Clock Frequency | 1.6 GHz |
| 데이터 버스 폭 | 16 bit |
IS43QR16512B-062AABL 핀 구성
| 핀 A1 | VDD — Power supply (1.2V) |
| 핀 A2 | DQ0 — Data input/output 0 |
| 핀 A3 | DQ1 — Data input/output 1 |
| 핀 B1 | VSS — Ground |
| 핀 B2 | DQ2 — Data input/output 2 |
| 핀 B3 | DQ3 — Data input/output 3 |
| 핀 C1 | VDDQ — I/O power supply |
| 핀 C2 | DQ4 — Data input/output 4 |
| 핀 C3 | DQ5 — Data input/output 5 |
| 핀 D1 | VSSQ — I/O ground |
| 핀 D2 | DQ6 — Data input/output 6 |
| 핀 D3 | DQ7 — Data input/output 7 |
| 핀 E1 | VDD — Power supply (1.2V) |
| 핀 E2 | DQS0 — Data strobe 0 |
| 핀 E3 | DQS0# — Data strobe 0 complement |
| 핀 F1 | VSS — Ground |
| 핀 F2 | DM0 — Data mask 0 |
| 핀 F3 | VDDQ — I/O power supply |
| 핀 G1 | A0 — Address input 0 |
| 핀 G2 | A1 — Address input 1 |
| 핀 G3 | A2 — Address input 2 |
| 핀 H1 | A3 — Address input 3 |
| 핀 H2 | A4 — Address input 4 |
| 핀 H3 | A5 — Address input 5 |
| 핀 J1 | A6 — Address input 6 |
| 핀 J2 | A7 — Address input 7 |
| 핀 J3 | A8 — Address input 8 |
| 핀 K1 | A9 — Address input 9 |
| 핀 K2 | A10/AP — Address input 10 / Auto-precharge |
| 핀 K3 | A11 — Address input 11 |
| 핀 L1 | A12 — Address input 12 |
| 핀 L2 | A13 — Address input 13 |
| 핀 L3 | A14 — Address input 14 |
| 핀 M1 | BA0 — Bank address 0 |
| 핀 M2 | BA1 — Bank address 1 |
| 핀 M3 | BA2 — Bank address 2 |
| 핀 N1 | BG0 — Bank group 0 |
| 핀 N2 | BG1 — Bank group 1 |
| 핀 N3 | VDD — Power supply (1.2V) |
| 핀 P1 | CK — Clock input |
| 핀 P2 | CK# — Clock input complement |
| 핀 P3 | CKE — Clock enable |
| 핀 R1 | CS# — Chip select |
| 핀 R2 | ODT — On-die termination |
| 핀 R3 | RAS# — Row address strobe |
| 핀 T1 | CAS# — Column address strobe |
| 핀 T2 | WE# — Write enable |
| 핀 T3 | RESET# — Reset |
| 핀 U1 | VSS — Ground |
| 핀 U2 | VDDQ — I/O power supply |
| 핀 U3 | VSSQ — I/O ground |
일반적인 애플리케이션
IS43QR16512B-062AABL 적합 용도: 6 애플리케이션s: High-Performance Servers, Networking Equipment, Data Centers, Industrial Computing, Telecommunications, Automotive Infotainment.
High-Performance Servers
The IS43QR16512B-062AABL provides 8Gb density and 3200 MT/s speed, making it ideal for server main memory. Its high bandwidth supports multi-core processors and virtualization workloads. The 1.2V supply reduces power consumption in data centers, and the 96-ball TWBGA package enables high-density board designs. With a CAS latency of 22-22-22, it balances speed and latency for enterprise applications.
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Networking Equipment
In routers and switches, the IS43QR16512B-062AABL offers high-speed data buffering and packet processing. Its 3200 MT/s data rate ensures low latency for network traffic, while the 8Gb capacity supports large routing tables and flow caches. The 1.2V operation minimizes heat generation in compact chassis, and the TWBGA package allows for space-efficient layouts. This DDR4 SDRAM is essential for maintaining throughput in 100GbE and higher systems.
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Data Centers
The IS43QR16512B-062AABL is suited for data center applications requiring high memory bandwidth and capacity. Its 8Gb density and 3200 MT/s speed support large-scale data analytics, cloud computing, and AI workloads. The low 1.2V supply reduces power and cooling costs, while the 96-ball TWBGA package enables high-density DIMM designs. With a case temperature range up to 95°C, it can operate reliably in dense server environments.
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Industrial Computing
For industrial PCs and embedded systems, the IS43QR16512B-062AABL provides reliable memory with a wide temperature range (0°C to +95°C). Its 8Gb capacity and 3200 MT/s speed handle real-time control and data acquisition. The 1.2V supply is compatible with industrial power rails, and the TWBGA package withstands vibration and thermal cycling. This DDR4 SDRAM is ideal for factory automation, robotics, and test equipment.
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Telecommunications
In telecom infrastructure, the IS43QR16512B-062AABL supports high-speed signal processing and buffering. Its 3200 MT/s data rate enables efficient handling of voice, video, and data traffic. The 8Gb density provides ample storage for call records and network management data. The 1.2V supply reduces power consumption in base stations and switches, and the TWBGA package is suitable for compact line cards.
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Automotive Infotainment
The IS43QR16512B-062AABL can be used in automotive infotainment systems requiring high memory bandwidth for navigation, multimedia, and driver assistance. Its 8Gb capacity and 3200 MT/s speed support smooth graphics and fast data access. The 1.2V supply is efficient for automotive power systems, and the TWBGA package is robust for under-hood or cabin environments. However, for automotive-grade (AEC-Q100) requirements, consider ISSI's automotive-qualified variants.
추천
추천 제품 요약
엔지니어링 참조 데이터: IS43QR16512B-062AABL — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IS43QR16512B-062AABL-TR | MT40A512M16TB-062E | K4A8G165WB-BCWE | H5AN8G6NDJR | AS4C512M16D4A-62BCN |
|---|---|---|---|---|---|---|
| Package | 96-TWBGA (7.5x13.5 mm) | 96-TWBGA (7.5x13.5 mm) | 96-TWBGA (7.5x13.5 mm) | 96-FBGA (7.5x13.5 mm) | 96-FBGA (7.5x13.5 mm) | 96-FBGA (7.5x13.5 mm) |
| Brand | ISSI | ISSI | Micron | Samsung | SK Hynix | Alliance Memory |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s |
| CAS Latency | 22-22-22 | 22-22-22 | 22-22-22 | 22-22-22 | 22-22-22 | 22-22-22 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | -40°C to +95°C (industrial) |
주요 차별점
- ISSI brand reliability and supply chain security (vs MT40A512M16TB-062E)
- Industrial temperature grade option (vs MT40A512M16TB-062E)
- Pin-compatible with major brands (vs K4A8G165WB-BCWE)
설계 노트
For reliable operation at 3200 MT/s, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command traces. Use a 4-layer or more PCB with solid ground and power planes. Keep trace lengths matched within +/- 10 mils for data groups to minimize skew. Follow JEDEC DDR4 layout guidelines for the 96-ball TWBGA package.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the balls. Use a dedicated 1.2V power plane and a separate VTT termination voltage (0.6V) for the address/command bus. Ensure the power supply can handle peak current spikes during refresh and burst operations.
The maximum case temperature is 95°C. For high-density DIMMs, ensure adequate airflow or heatsinking. The TWBGA package has a thermal resistance of approximately 20°C/W (theta_JA) with proper PCB thermal vias. Monitor the case temperature in high-ambient environments to avoid exceeding the limit.
규정 준수 정보
RoHS compliant per Mouser and DigiKey listings. No AEC-Q100 qualification for this standard part.
