1ED3124MU12HXUMA1 vs 1EDB7275FXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1ED3124MU12HXUMA1 disebabkan oleh Infineon dan 1EDB7275FXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1ED3124MU12HXUMA1 1EDB7275FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Single-channel isolated gate driver IC Single-channel isolated gate driver IC
Manufacturer Family EiceDRIVER Compact 1ED31xxMU12H (X3 compact) —
Peak Output Current (source/sink) 14 A typical —
Konfigurasi Output Separate source and sink pins —
Galvanic Isolation (rms) 5.7 kV (UL 1577) —
Working Voltage (continuous) 1200 V —
Common-Mode Transient Immunity (CMTI) 200 kV/us minimum 300 V/ns (minimum)
Propagation Delay (typ.) 90 ns —
UVLO Threshold 10.5 V —
Isolation Technology Coreless transformer (CT) Coreless transformer (CT) magnetic coupling
Kemasan PG-DSO-8-66 (DSO-8 wide-body) PG-DSO-8 (150 mil DSO, 8-pin)
Creepage Distance >8 mm —
Gambaran Suhu Operasi -40C to +125C [DATA_NEEDED: full operating temperature range]
Target Switch Types IGBT, power MOSFET, SiC MOSFET —
Recommended Switch Class Up to 2300 V IGBT / SiC modules —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL2 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
Topology Supported — High-side / low-side, half-bridge (with two parts)
Isolation Voltage (Viso) — 3000 Vrms
Peak Source Output Current — 5.4 A (typical)
Peak Sink Output Current — 9.8 A (typical)
Propagation Delay — +6 / -4 ns (typical, see datasheet family)
Supported Switch Technologies — Si MOSFET, SiC MOSFET, GaN HEMT
UVLO Protection — Yes (secondary side)
Marking Code — 1B7275A

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