1EDN7126GXTMA1 vs 1EDN7136UXTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN7126GXTMA1 disebabkan oleh Infineon dan 1EDN7136UXTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1EDN7126GXTMA1 1EDN7136UXTSA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Single-channel TDI gate driver for GaN HEMT and Si MOSFET High-side / Low-side gate driver IC
Configuration Non-Inverting —
Channel Type Single —
Driven Supply Voltage [DATA_NEEDED: VCC max value] —
Peak Source Current 1.5 A 1 A
Peak Sink Current 1.5 A 2 A
Common-Mode Voltage (CMR) 200 V —
Input Type Truly Differential Input (TDI) Truly Differential Input (TDI)
Propagation Delay (Typ.) [DATA_NEEDED: tpd typical value] —
Rise / Fall Time (Typ.) [DATA_NEEDED: tr / tf typical value] —
Gambaran Suhu Operasi -40C to +125C -40 C to +150 C
Kemasan PG-VSON-10-4 TSNP-6 with exposed pad (PG-VSON-1)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Reach Compliant —
Lead-Free Yes Yes
Input Logic Compatibility 3.3 V / 5 V TTL/CMOS (TDI) —
Driven Device Type — GaN HEMT, N-channel MOSFET
Bilangan Output — 2 (high-side and low-side)
Driver Supply Voltage (Max) — 200 V
Logic Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Active Miller Clamp — Yes (integrated)
Under-Voltage Lockout (UVLO) — Yes (driver supply and logic input)
Propagation Delay (Typ) — [DATA_NEEDED: propagation delay value]
Boson Bebas — Yes (per Infineon product family convention)

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