1EDN7126GXTMA1 vs 1EDN7136UXTSA1 比較

詳細並排比較 1EDN7126GXTMA1 由 Infineon 與 1EDN7136UXTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 1EDN7126GXTMA1 1EDN7136UXTSA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Single-channel TDI gate driver for GaN HEMT and Si MOSFET High-side / Low-side gate driver IC
Configuration Non-Inverting —
Channel Type Single —
Driven Supply Voltage [DATA_NEEDED: VCC max value] —
Peak Source Current 1.5 A 1 A
Peak Sink Current 1.5 A 2 A
Common-Mode Voltage (CMR) 200 V —
Input Type Truly Differential Input (TDI) Truly Differential Input (TDI)
Propagation Delay (Typ.) [DATA_NEEDED: tpd typical value] —
Rise / Fall Time (Typ.) [DATA_NEEDED: tr / tf typical value] —
工作溫度範圍 -40C to +125C -40 C to +150 C
封裝 PG-VSON-10-4 TSNP-6 with exposed pad (PG-VSON-1)
安裝類型 Surface Mount Surface Mount
MSL 等級 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
RoHS 狀態 Compliant Compliant
Reach Compliant —
Lead-Free Yes Yes
Input Logic Compatibility 3.3 V / 5 V TTL/CMOS (TDI) —
Driven Device Type — GaN HEMT, N-channel MOSFET
輸出數量 — 2 (high-side and low-side)
Driver Supply Voltage (Max) — 200 V
Logic Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Active Miller Clamp — Yes (integrated)
Under-Voltage Lockout (UVLO) — Yes (driver supply and logic input)
Propagation Delay (Typ) — [DATA_NEEDED: propagation delay value]
無鹵素 — Yes (per Infineon product family convention)

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