2N7002-7-F vs MMBF170LT1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2N7002-7-F disebabkan oleh Diodes Incorporated dan MMBF170LT1 disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2N7002-7-F MMBF170LT1
Merek Diodes Incorporated onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel Enhancement-Mode MOSFET N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage (VDS max) 60 V —
Continuous Drain Current (ID) at Ta 115 mA —
Continuous Drain Current Range (per Mouser listing) 105 mA to 210 mA —
Power Dissipation (PD) at Ta 370 mW —
On-Resistance RDS(on) 7.5 ohm to 13.5 ohm —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Kemasan SOT-23-3 (TO-236) —
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: Tj / TA operating range] -55 °C to +150 °C (TJ max per datasheet)
Gate Charge (Qg) [DATA_NEEDED: total gate charge typical] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
Status RoHS Compliant Compliant (per onsemi product page)
Terminal Finish Matte tin (solderable per MIL-STD-202, method 208) —
Channel Mode Enhancement —
Technology Trench MOSFET DMOS
Manufacturer — onsemi (ON Semiconductor)
Part Number — MMBF170LT1
Drain-Source Voltage (VDSS) — 60 V
Drain-Gate Voltage (VDGS) — 60 Vdc
Gate-Source Voltage - Continuous (VGS) — ±20 Vdc (per datasheet)
Gate-Source Voltage - Non-repetitive (VGSM) — ±40 Vpk (tp <= 50 ms)
Continuous Drain Current (ID) — 500 mA (Ta)
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
Total Device Dissipation (PD) — 225 mW (Ta, FR-5 board)
Kemasan / Case — SOT-23-3 (TO-236)
Kiraan Pin — 3
AEC-Q101 Qualified — Yes (per datasheet)
Polarity — N-Channel

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