AS4C512M16D4B-62BCNTR vs MT40A512M16TB-062E:R Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci AS4C512M16D4B-62BCNTR disebabkan oleh Alliance Memory dan MT40A512M16TB-062E:R disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Alliance Memory
AS4C512M16D4B-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4B-62BCNTR ✓ AktifMicron Technology
MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A512M16TB-062E:R ✓ AktifPengandingan Spesifikasi
| Parametr | AS4C512M16D4B-62BCNTR | MT40A512M16TB-062E:R |
|---|---|---|
| Merek | Alliance Memory | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $60.00 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gbit (512M x 16) | 8 Gbit (512M x 16) |
| Kadar Data | 3200 MT/s | 3200 MT/s |
| Clock Frequency | 1600 MHz | 1600 MHz |
| Latensi CAS | 19 ns | 22 |
| Tegangan Pemberi Arus | 1.2 V (1.14V to 1.26V) | — |
| Antaramuka | Parallel | Parallel |
| Kemasan | 96-FBGA (7.5x13 mm) | 96-FBGA (7.5x13 mm) |
| Suhu Operasi | 0°C to 95°C | 0°C to +95°C |
| Jenis Pemasangan | Surface Mount | — |
| JEDEC Standard | Compliant | — |
| Organisasi | 512M x 16 | — |
| Revision | Rev.B | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Voltage | — | 2.5V (-125mV, +250mV) |
| Lebar Bus Data | — | 16 bits |
| Refresh Time | — | 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C) |
| I/O Type | — | 1.2V pseudo open-drain |
| Ciri-ciri | — | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration |