BD249C-S vs BD249C Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BD249C-S disebabkan oleh Bourns dan BD249C disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BD249C-S BD249C
Merek Bourns onsemi
Kategori Transistors Transistors
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor NPN Bipolar Junction Transistor (BJT) Single Bipolar (BJT)
Tegangan Pengumpul-Pemancar (Vceo) 100 V 100 V
Collector-Base Voltage (VCB) 100 V —
Emitter-Base Voltage (VEB) 5 V —
Collector Current (Continuous) 25 A —
Collector Current (Peak) 40 A —
Total Power Dissipation (TC = 25 C) 125 W —
Power Derating 1.0 W/C above 25 C case temperature —
Frekuensi Pertukaran (ft) 3 MHz 3 MHz
DC Current Gain (hFE) [DATA_NEEDED: hFE range and test conditions] [DATA_NEEDED: hFE range]
Kemasan SOT-93 (TO-218), 3 pins, through hole SOT-93 (through hole)
Jenis Pemasangan Through Hole Through Hole
Kiraan Pin 3 —
Series Grade BD249C (C grade, highest VCEO in BD249 series) —
Complementary Device BD250 series (PNP) —
Suhu Operasi [DATA_NEEDED: storage/operating junction temperature range] —
ESD Rating (HBM) Class 3B, > 8000 V (per onsemi BD249C family data) —
Flammability Rating UL 94 V-0 @ 0.125 in (epoxy, family data) UL 94 V-0 @ 0.125 in
Status RoHS [DATA_NEEDED: RoHS status for BD249C-S specifically] —
Polarity — NPN
Continuous Collector Current — 25 A
Peak Collector Current — 40 A
Power Dissipation (at 25 C case) — 125 W
Complementary PNP Part — BD250 series
ESD Rating - Machine Model — > 400 V (Class C)
ESD Rating - Human Body Model — > 8000 V (Class 3B)
Lead-Free (Pb-Free) Package — Available
Operating Case Temperature — [DATA_NEEDED: operating case temperature range]

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