BD249C-S vs BD249C 比較

詳細並排比較 BD249C-S 由 Bourns 與 BD249C 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 BD249C-S BD249C
品牌 Bourns onsemi
類別 Transistors Transistors
生命週期狀態 啟用中 啟用中
電晶體類型 NPN Bipolar Junction Transistor (BJT) Single Bipolar (BJT)
集極-射極電壓 (Vceo) 100 V 100 V
Collector-Base Voltage (VCB) 100 V —
Emitter-Base Voltage (VEB) 5 V —
Collector Current (Continuous) 25 A —
Collector Current (Peak) 40 A —
Total Power Dissipation (TC = 25 C) 125 W —
Power Derating 1.0 W/C above 25 C case temperature —
轉換頻率 (ft) 3 MHz 3 MHz
DC Current Gain (hFE) [DATA_NEEDED: hFE range and test conditions] [DATA_NEEDED: hFE range]
封裝 SOT-93 (TO-218), 3 pins, through hole SOT-93 (through hole)
安裝類型 Through Hole Through Hole
腳位數 3 —
Series Grade BD249C (C grade, highest VCEO in BD249 series) —
Complementary Device BD250 series (PNP) —
工作溫度 [DATA_NEEDED: storage/operating junction temperature range] —
ESD Rating (HBM) Class 3B, > 8000 V (per onsemi BD249C family data) —
Flammability Rating UL 94 V-0 @ 0.125 in (epoxy, family data) UL 94 V-0 @ 0.125 in
RoHS 狀態 [DATA_NEEDED: RoHS status for BD249C-S specifically] —
Polarity — NPN
Continuous Collector Current — 25 A
Peak Collector Current — 40 A
Power Dissipation (at 25 C case) — 125 W
Complementary PNP Part — BD250 series
ESD Rating - Machine Model — > 400 V (Class C)
ESD Rating - Human Body Model — > 8000 V (Class 3B)
Lead-Free (Pb-Free) Package — Available
Operating Case Temperature — [DATA_NEEDED: operating case temperature range]

資料表與資源

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