BSC009NE2LSATMA1 vs BSC010NE2LSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC009NE2LSATMA1 disebabkan oleh Infineon dan BSC010NE2LSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC009NE2LSATMA1 BSC010NE2LSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 25V —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS (Trench)
Drain-Source Voltage (V_DS) 25 V —
Continuous Drain Current (I_D) at T_a 41 A —
Continuous Drain Current (I_D) at T_c 100 A (Mouser listing), 255 A pulsed (DigiKey) —
Pulsed Drain Current (I_DM) 255 A —
R_DS(on) Max @ V_GS=10V 0.9 mOhm —
Power Dissipation (T_a) 2.5 W —
Power Dissipation (T_c) 96 W —
Gate Threshold Voltage V_GS(th) Typ [DATA_NEEDED: V_GS(th) typical value] —
Gambaran Suhu Operasi -55C to +150C (TJ) -55C to +150C (TJ)
Kemasan / Case PG-TDSON-8-7 (TDSON-8 FL) —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 8
Aras MSL 1 [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Series / Family — OptiMOS 25V
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 25 V
Continuous Drain Current (ID) at TA — 38 A
Continuous Drain Current (ID) at TC — 100 A
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 96 W
Kemasan — PG-TDSON-8-7 (TDSON-8 EP)
Configuration — Single N-Channel
Gate Drive — Logic-level compatible
Rds(on) at 10V — [DATA_NEEDED: Rds(on) at VGS=10V]
Rds(on) at 4.5V — [DATA_NEEDED: Rds(on) at VGS=4.5V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]

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