BSC009NE2LSATMA1 vs BSC010NE2LSIATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC009NE2LSATMA1 sa pamamagitan ng Infineon at BSC010NE2LSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC009NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 0.9mOhm | Infineon
BSC009NE2LSATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC009NE2LSATMA1 | BSC010NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 25V | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS (Trench) |
| Drain-Source Voltage (V_DS) | 25 V | — |
| Continuous Drain Current (I_D) at T_a | 41 A | — |
| Continuous Drain Current (I_D) at T_c | 100 A (Mouser listing), 255 A pulsed (DigiKey) | — |
| Pulsed Drain Current (I_DM) | 255 A | — |
| R_DS(on) Max @ V_GS=10V | 0.9 mOhm | — |
| Power Dissipation (T_a) | 2.5 W | — |
| Power Dissipation (T_c) | 96 W | — |
| Gate Threshold Voltage V_GS(th) Typ | [DATA_NEEDED: V_GS(th) typical value] | — |
| Hanay ng Temperature na Operasyon | -55C to +150C (TJ) | -55C to +150C (TJ) |
| Packhaging / Kaso | PG-TDSON-8-7 (TDSON-8 FL) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 8 | 8 |
| Level ng MSL | 1 | [DATA_NEEDED: MSL rating] |
| Tindminan RoHS | Compliant | Compliant |
| Series / Family | — | OptiMOS 25V |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at TA | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 96 W |
| Packhaging | — | PG-TDSON-8-7 (TDSON-8 EP) |
| Configuration | — | Single N-Channel |
| Gate Drive | — | Logic-level compatible |
| Rds(on) at 10V | — | [DATA_NEEDED: Rds(on) at VGS=10V] |
| Rds(on) at 4.5V | — | [DATA_NEEDED: Rds(on) at VGS=4.5V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |