BSC009NE2LSATMA1 vs BSC014NE2LSIATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC009NE2LSATMA1 disebabkan oleh Infineon dan BSC014NE2LSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC009NE2LSATMA1 | BSC014NE2LSIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 25V | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | N-Channel MOSFET (OptiMOS 25V) |
| Drain-Source Voltage (V_DS) | 25 V | — |
| Continuous Drain Current (I_D) at T_a | 41 A | — |
| Continuous Drain Current (I_D) at T_c | 100 A (Mouser listing), 255 A pulsed (DigiKey) | — |
| Pulsed Drain Current (I_DM) | 255 A | — |
| R_DS(on) Max @ V_GS=10V | 0.9 mOhm | — |
| Power Dissipation (T_a) | 2.5 W | — |
| Power Dissipation (T_c) | 96 W | — |
| Gate Threshold Voltage V_GS(th) Typ | [DATA_NEEDED: V_GS(th) typical value] | — |
| Gambaran Suhu Operasi | -55C to +150C (TJ) | — |
| Kemasan / Case | PG-TDSON-8-7 (TDSON-8 FL) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 8 | — |
| Aras MSL | 1 | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 25 V |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID, Ta) | — | 33 A |
| Continuous Drain Current (ID, Tc) | — | [DATA_NEEDED: Tc condition rating] |
| Pulsed Drain Current (IDM, Tc) | — | 100 A |
| On-State Resistance RDS(on) | — | 1.4 mOhm (typ) at VGS = 10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ at VGS=10V] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 74 W |
| Suhu Hubungan Operasi | — | -55 °C to +150 °C |
| Kemasan | — | PG-TDSON-8-7 (SuperSO8) |
| Lead-Free | — | Yes |