BSC009NE2LSATMA1 vs BSC014NE2LSIATMA1 Comparison
Detailed side-by-side comparison of BSC009NE2LSATMA1 by Infineon and BSC014NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC009NE2LSATMA1
BSC009NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 0.9mOhm | Infineon
BSC009NE2LSATMA1 β ActiveInfineon
BSC014NE2LSIATMA1
BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon
BSC014NE2LSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC009NE2LSATMA1 | BSC014NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.38 | $0.48 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 25V | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | N-Channel MOSFET (OptiMOS 25V) |
| Drain-Source Voltage (V_DS) | 25 V | β |
| Continuous Drain Current (I_D) at T_a | 41 A | β |
| Continuous Drain Current (I_D) at T_c | 100 A (Mouser listing), 255 A pulsed (DigiKey) | β |
| Pulsed Drain Current (I_DM) | 255 A | β |
| R_DS(on) Max @ V_GS=10V | 0.9 mOhm | β |
| Power Dissipation (T_a) | 2.5 W | β |
| Power Dissipation (T_c) | 96 W | β |
| Gate Threshold Voltage V_GS(th) Typ | [DATA_NEEDED: V_GS(th) typical value] | β |
| Operating Temperature Range | -55C to +150C (TJ) | β |
| Package / Case | PG-TDSON-8-7 (TDSON-8 FL) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Drain-Source Voltage (VDS) | β | 25 V |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current (ID, Ta) | β | 33 A |
| Continuous Drain Current (ID, Tc) | β | [DATA_NEEDED: Tc condition rating] |
| Pulsed Drain Current (IDM, Tc) | β | 100 A |
| On-State Resistance RDS(on) | β | 1.4 mOhm (typ) at VGS = 10 V |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typ at VGS=10V] |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 74 W |
| Operating Junction Temperature | β | -55 Β°C to +150 Β°C |
| Package | β | PG-TDSON-8-7 (SuperSO8) |
| Lead-Free | β | Yes |