BSC011N03LSATMA1 vs ISC011N03L5SATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC011N03LSATMA1 disebabkan oleh Infineon dan ISC011N03L5SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC011N03LSATMA1 | ISC011N03L5SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 30V | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TA=25C | 37 A | — |
| Pulsed Drain Current (IDM) | 100 A (TC) | — |
| On-State Resistance (RDS(on)) at VGS=10V | 1.1 mOhm (typ) | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V (typ 1.6 V) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation (PD) at TC=25C | 96 W | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| Gambaran Suhu Operasi | -55C to +150C | — |
| Kemasan | PG-TDSON-8-1 (SuperSO8) | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Series | — | OptiMOS 5 / StrongIRFET 30 V |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta=25C | — | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | — | 100 A |
| Power Dissipation (PD) @ Ta=25C | — | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | — | 96 W |
| Suhu Operasi | — | -55 C to +175 C (TJ) |
| Technology | — | OptiMOS 5 trench MOSFET |
| Gate Drive | — | Logic-level compatible |