BSC011N03LSATMA1 vs ISC011N03L5SATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC011N03LSATMA1 sa pamamagitan ng Infineon at ISC011N03L5SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSC011N03LSATMA1 | ISC011N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 30V | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TA=25C | 37 A | — |
| Pulsed Drain Current (IDM) | 100 A (TC) | — |
| On-State Resistance (RDS(on)) at VGS=10V | 1.1 mOhm (typ) | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V (typ 1.6 V) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation (PD) at TC=25C | 96 W | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | — |
| Packhaging | PG-TDSON-8-1 (SuperSO8) | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 | 1 (per JEDEC J-STD-020) |
| Tindminan RoHS | Compliant | Compliant |
| Series | — | OptiMOS 5 / StrongIRFET 30 V |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta=25C | — | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | — | 100 A |
| Power Dissipation (PD) @ Ta=25C | — | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | — | 96 W |
| Temperature na Operasyon | — | -55 C to +175 C (TJ) |
| Technology | — | OptiMOS 5 trench MOSFET |
| Gate Drive | — | Logic-level compatible |