BSC016N06NSTATMA1 vs BSZ031NE2LS5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC016N06NSTATMA1 disebabkan oleh Infineon dan BSZ031NE2LS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC016N06NSTATMA1 | BSZ031NE2LS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC016N06NSTATMA1 | BSZ031NE2LS5ATMA1 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Continuous Drain Current (ID, Ta=25C) | 31 A | — |
| On-Resistance RDS(on) max (VGS=10V) | 1.6 mOhm | — |
| Power Dissipation (Tc) | 167 W | — |
| Power Dissipation (Ta) | 3 W | — |
| Kemasan | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55 C to +150 C | — |
| Aras MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL] |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Series | OptiMOS | — |
| Technology / Platform | — | OptiMOS 5 25V/30V N-channel trench MOSFET |
| Drain-Source Voltage (VDS) max | — | 25 V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta=25C | — | 19 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max @ VGS=10 V | — | 3.1 mOhm |
| RDS(on) typical @ VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Power Dissipation at Ta=25C | — | 2.1 W |
| Power Dissipation at Tc=25C | — | 30 W |
| Suhu Hubungan Operasi | — | -55 C to +150 C |
| Boson Bebas | — | Yes |