BSC016N06NSTATMA1 vs BSZ031NE2LS5ATMA1 Comparison

Detailed side-by-side comparison of BSC016N06NSTATMA1 by Infineon and BSZ031NE2LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC016N06NSTATMA1 BSZ031NE2LS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC016N06NSTATMA1 BSZ031NE2LS5ATMA1
FET Type N-Channel —
Technology OptiMOS 5 —
Drain-to-Source Voltage (VDS) 60 V —
Gate-to-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Continuous Drain Current (ID, Ta=25C) 31 A —
On-Resistance RDS(on) max (VGS=10V) 1.6 mOhm —
Power Dissipation (Tc) 167 W —
Power Dissipation (Ta) 3 W —
Package PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +150 C —
MSL Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL]
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Series OptiMOS —
Technology / Platform — OptiMOS 5 25V/30V N-channel trench MOSFET
Drain-Source Voltage (VDS) max — 25 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Continuous Drain Current (ID) at Ta=25C — 19 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
RDS(on) max @ VGS=10 V — 3.1 mOhm
RDS(on) typical @ VGS=4.5 V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Power Dissipation at Ta=25C — 2.1 W
Power Dissipation at Tc=25C — 30 W
Operating Junction Temperature — -55 C to +150 C
Halogen Free — Yes

Datasheets & Resources

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