BSC016N06NSTATMA1 vs BSZ031NE2LS5ATMA1 比較
詳細並排比較 BSC016N06NSTATMA1 由 Infineon 與 BSZ031NE2LS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC016N06NSTATMA1 | BSZ031NE2LS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC016N06NSTATMA1 | BSZ031NE2LS5ATMA1 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Continuous Drain Current (ID, Ta=25C) | 31 A | — |
| On-Resistance RDS(on) max (VGS=10V) | 1.6 mOhm | — |
| Power Dissipation (Tc) | 167 W | — |
| Power Dissipation (Ta) | 3 W | — |
| 封裝 | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 C to +150 C | — |
| MSL 等級 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL] |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Series | OptiMOS | — |
| Technology / Platform | — | OptiMOS 5 25V/30V N-channel trench MOSFET |
| Drain-Source Voltage (VDS) max | — | 25 V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta=25C | — | 19 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max @ VGS=10 V | — | 3.1 mOhm |
| RDS(on) typical @ VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Power Dissipation at Ta=25C | — | 2.1 W |
| Power Dissipation at Tc=25C | — | 30 W |
| 工作接面溫度 | — | -55 C to +150 C |
| 無鹵素 | — | Yes |