BSC027N04LSGATMA1 vs IAUC120N06S5L032ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC027N04LSGATMA1 disebabkan oleh Infineon dan IAUC120N06S5L032ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC120N06S5L032ATMA1 IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L032ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC027N04LSGATMA1 IAUC120N06S5L032ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 OptiMOS 5 (60 V)
Jenis Transistor N-Channel MOSFET N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at Ta=25°C 24 A —
Continuous Drain Current (ID) at Tc=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 2.7 mΩ —
Power Dissipation (Ta=25°C) 2.5 W —
Pembuangan Kuasa (TC=25°C) 83 W —
Gambaran Suhu Operasi -55°C to +150°C -55 C to +175 C (T_j)
Kemasan PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8-34 (5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 3 (Trench) OptiMOS 5 Trench
Aras MSL 1 [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Boson Bebas Yes —
Drain-to-Source Voltage (V_DS) — 60 V
Continuous Drain Current (I_D, T_j) — 120 A
R_DS(on) Max (V_GS = 10 V) — 3.2 mOhm
Power Dissipation (P_D, T_C = 25 C) — 94 W
AEC-Q101 Qualified — Yes
Gate Threshold Voltage V_GS(th) — [DATA_NEEDED: V_GS(th) typical and min/max]
Total Gate Charge Q_G — [DATA_NEEDED: Q_G total at V_GS=10V]

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