BSC027N04LSGATMA1 vs IAUC120N06S5L032ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC027N04LSGATMA1 sa pamamagitan ng Infineon at IAUC120N06S5L032ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC027N04LSGATMA1 - 40V 100A 2.7mΩ OptiMOS 3 N-MOSFET | Infineon
BSC027N04LSGATMA1 ✓ NakahandaInfineon
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC027N04LSGATMA1 | IAUC120N06S5L032ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | OptiMOS 5 (60 V) |
| Uri ng Transistor | N-Channel MOSFET | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 40 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 24 A | — |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 2.7 mΩ | — |
| Power Dissipation (Ta=25°C) | 2.5 W | — |
| Pwersang Pinahihigpit (TC=25°C) | 83 W | — |
| Hanay ng Temperature na Operasyon | -55°C to +150°C | -55 C to +175 C (T_j) |
| Packhaging | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-34 (5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS 3 (Trench) | OptiMOS 5 Trench |
| Level ng MSL | 1 | [DATA_NEEDED: MSL rating] |
| Tindminan RoHS | Compliant | Compliant |
| Wala sa Halogen | Yes | — |
| Drain-to-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, T_j) | — | 120 A |
| R_DS(on) Max (V_GS = 10 V) | — | 3.2 mOhm |
| Power Dissipation (P_D, T_C = 25 C) | — | 94 W |
| AEC-Q101 Qualified | — | Yes |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge Q_G | — | [DATA_NEEDED: Q_G total at V_GS=10V] |