BSC035N04LSGATMA1 vs BSC054N04NSGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC035N04LSGATMA1 disebabkan oleh Infineon dan BSC054N04NSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC035N04LSGATMA1 | BSC054N04NSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Continuous Drain Current (ID) at Ta=25°C | 21 A | — |
| RDS(on) Max at VGS=10V | 3.5 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V (typ) | — |
| Power Dissipation (Pd) at Ta=25°C | 2.5 W | — |
| Power Dissipation (Pd) at Tc=25°C | 69 W | — |
| Suhu Hubungan Operasi | -55°C to +150°C | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kemasan | PG-TDSON-8-1 (8-pin, exposed drain pad) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Part Number | — | BSC054N04NSGATMA1 |
| Technology | — | OptiMOS 3 (N-Channel Trench MOSFET) |
| Continuous Drain Current (ID) at Tc=25C | — | 81 A |
| Continuous Drain Current (ID) at Ta=25C | — | 17 A |
| On-Resistance RDS(on) max at VGS=10V | — | 5.4 mOhm |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation at Tc=25C | — | 57 W |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Gambaran Suhu Operasi | — | -55C to +150C |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |
| Gate Drive Voltage (recommended) | — | 10 V |
| Lead-Free Reflow | — | Yes |