BSC035N04LSGATMA1 vs BSC054N04NSGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC035N04LSGATMA1 sa pamamagitan ng Infineon at BSC054N04NSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC035N04LSGATMA1 - 40V 100A 3.5mΩ OptiMOS 3 N-MOSFET | Infineon
BSC035N04LSGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC035N04LSGATMA1 | BSC054N04NSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Continuous Drain Current (ID) at Ta=25°C | 21 A | — |
| RDS(on) Max at VGS=10V | 3.5 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V (typ) | — |
| Power Dissipation (Pd) at Ta=25°C | 2.5 W | — |
| Power Dissipation (Pd) at Tc=25°C | 69 W | — |
| Temperature ng Junction na Operasyon | -55°C to +150°C | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packhaging | PG-TDSON-8-1 (8-pin, exposed drain pad) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Part Number | — | BSC054N04NSGATMA1 |
| Technology | — | OptiMOS 3 (N-Channel Trench MOSFET) |
| Continuous Drain Current (ID) at Tc=25C | — | 81 A |
| Continuous Drain Current (ID) at Ta=25C | — | 17 A |
| On-Resistance RDS(on) max at VGS=10V | — | 5.4 mOhm |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation at Tc=25C | — | 57 W |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Hanay ng Temperature na Operasyon | — | -55C to +150C |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |
| Gate Drive Voltage (recommended) | — | 10 V |
| Lead-Free Reflow | — | Yes |