BSC117N08NS5ATMA1 vs IPD33CN10NGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC117N08NS5ATMA1 disebabkan oleh Infineon dan IPD33CN10NGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC117N08NS5ATMA1 | IPD33CN10NGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC117N08NS5ATMA1 | — |
| Technology | OptiMOS 5 | OptiMOS (Trench) |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Continuous Drain Current (ID) max | 49 A (Tc) | — |
| On-State Resistance (RDS(on)) max | 11.7 mOhm | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 50 W | — |
| Kemasan | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TO252-3 (DPAK), Surface Mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 8 | 3 (Gate, Drain, Source) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | [DATA_NEEDED: typical Qg] |
| Gambaran Suhu Operasi | -55 C to +150 C (typical MOSFET junction) | -55C to +175C (TJ) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Aras MSL | 1 | 1 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 27 A |
| Power Dissipation (PD, Tc) | — | 58 W |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |