BSC117N08NS5ATMA1 vs IPD33CN10NGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC117N08NS5ATMA1 sa pamamagitan ng Infineon at IPD33CN10NGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD33CN10NGATMA1 - 100V N-Ch OptiMOS MOSFET | Infineon | PG-TO252
IPD33CN10NGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC117N08NS5ATMA1 | IPD33CN10NGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC117N08NS5ATMA1 | — |
| Technology | OptiMOS 5 | OptiMOS (Trench) |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Continuous Drain Current (ID) max | 49 A (Tc) | — |
| On-State Resistance (RDS(on)) max | 11.7 mOhm | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 50 W | — |
| Packhaging | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TO252-3 (DPAK), Surface Mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 8 | 3 (Gate, Drain, Source) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | [DATA_NEEDED: typical Qg] |
| Hanay ng Temperature na Operasyon | -55 C to +150 C (typical MOSFET junction) | -55C to +175C (TJ) |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Level ng MSL | 1 | 1 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 27 A |
| Power Dissipation (PD, Tc) | — | 58 W |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |