BSC12DN20NS3GATMA1 vs ISC151N08NM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC12DN20NS3GATMA1 disebabkan oleh Infineon dan ISC151N08NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC12DN20NS3GATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 200V | — |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | 80 V |
| Continuous Drain Current (ID, Tc) | 11.3 A | — |
| Power Dissipation (PD, Tc) | 50 W | — |
| Kemasan | PG-TDSON-8-5 | PG-TDSON-8 FL |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold typical] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Technology | OptiMOS power MOSFET | OptiMOS 6 |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Configuration | Single N-channel | — |
| Kiraan Pin | 8 | — |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| Arus Kumpal Tetap (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| On-Resistance RDS(on) max | — | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Bilangan Pin | — | 8 |
| Channel Mode | — | Enhancement |
| Suhu Operasi | — | -55 °C to +175 °C |