BSC12DN20NS3GATMA1 vs ISC151N08NM6ATMA1 Comparison

Detailed side-by-side comparison of BSC12DN20NS3GATMA1 by Infineon and ISC151N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC12DN20NS3GATMA1

BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon

BSC12DN20NS3GATMA1 βœ“ Active
Infineon
ISC151N08NM6ATMA1

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 βœ“ Active

Specification Comparison

Parameter BSC12DN20NS3GATMA1 ISC151N08NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $0.78
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 200V β€”
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 200 V 80 V
Continuous Drain Current (ID, Tc) 11.3 A β€”
Power Dissipation (PD, Tc) 50 W β€”
Package PG-TDSON-8-5 PG-TDSON-8 FL
Mounting Type Surface Mount Surface Mount
Operating Temperature Range [DATA_NEEDED: operating temperature range] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold typical] β€”
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] β€”
Gate Charge (Qg) [DATA_NEEDED: total gate charge] β€”
Technology OptiMOS power MOSFET OptiMOS 6
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) β€”
Configuration Single N-channel β€”
Pin Count 8 β€”
Continuous Drain Current (TA=25Β°C) β€” 9.2 A
Continuous Drain Current (TC=25Β°C) β€” 37 A
Power Dissipation (TA) β€” 3 W
Power Dissipation (TC) β€” 48 W
On-Resistance RDS(on) max β€” 15.1 mΞ©
Gate Threshold Voltage VGS(th) typ β€” 3.5 V
Number of Pins β€” 8
Channel Mode β€” Enhancement
Operating Temperature β€” -55 Β°C to +175 Β°C

Datasheets & Resources

Browse All Products Create BOM Request Quote