BSF134N10NJ3GXUMA1 vs BSC0921NDIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSF134N10NJ3GXUMA1 disebabkan oleh Infineon dan BSC0921NDIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSF134N10NJ3GXUMA1 BSC0921NDIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 100 V —
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 30 V
Continuous Drain Current (ID) at TA=25°C 9 A —
Continuous Drain Current (ID) at TC=25°C 40 A —
Power Dissipation (PD) at TA=25°C 2.2 W —
Power Dissipation (PD) at TC=25°C 43 W —
Kemasan MG-WDSON-2 (CanPAK M) PG-TISON-8 (8-pin, exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Configuration Single with built-in diode Dual N-Channel MOSFET Array
Terminal Position Bottom —
Terminal Finish Silver Nickel —
Gambaran Suhu Operasi -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] 1 (per Infineon OptiMOS family)
Technology Trench-gate OptiMOS planar OptiMOS 25V (N-channel)
Gate Charge (Qg) [DATA_NEEDED: Qg value] Ultra-low (OptiMOS 25V family characteristic)
RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) max value] —
Body Diode Reverse Recovery [DATA_NEEDED: trr value] —
Continuous Drain Current (ID) — 17 A (per channel)
Pulsed Drain Current (IDM) — 31 A (per channel, package-limited)
Total Power Dissipation (PD) — 1 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V/4.5V]
Output Charge (Qoss) — Ultra-low (OptiMOS 25V family characteristic)
Suhu Operasi — -55C to +150C (junction)
Primary Application — Synchronous buck converters, VRMs, POL regulators

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