BSP125H6327XTSA1 vs BSR315PH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP125H6327XTSA1 disebabkan oleh Infineon dan BSR315PH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSP125H6327XTSA1 BSR315PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSP125H6327XTSA1 BSR315PH6327XTSA1
Jenis Transistor N-Channel MOSFET —
Technology SIPMOS (Small Signal Power MOSFET) —
Drain-Source Voltage (VDS) 600 V -60 V
Continuous Drain Current (ID) 120 mA (Ta) -620 mA (Ta)
Power Dissipation (PD) 1.8 W (Ta) 500 mW (Ta)
Kemasan PG-SOT223-4 (SOT-223-3 + tab) PG-SC59-3 / SOT-23-3
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55C to +150C (TJ) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] ±20 V (max VGS)
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V] —
Configuration Single —
Channel Mode Enhancement —
Status RoHS Compliant Compliant
Aras MSL 1 (Unlimited) —
Qualification Automotive / Industrial grade —
Series — OptiMOS P-Channel
FET Type — P-Channel, Enhancement Mode
On-State Resistance (RDS(on)) — 800 mOhm @ -620 mA, -10 V
Input Capacitance (Ciss) — 176 pF @ 25 V
Total Gate Charge (Qg) — 6 nC @ 10 V
Gambaran Suhu Operasi — -55 C to +150 C (TJ)
Kiraan Pin — 3
Packaging — Tape & Reel (TR)
Automotive Qualified — Yes (per Infineon product family marking)

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