BSP315PH6327XTSA1 vs BSP135H6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP315PH6327XTSA1 disebabkan oleh Infineon dan BSP135H6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSP315PH6327XTSA1 BSP135H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel N-Channel, Depletion Mode
Technology OptiMOS (enhancement mode) SIPMOS (planar DMOS)
Drain-Source Voltage (VDS) -60 V 600 V
Continuous Drain Current (ID) -1.17 A (Ta) 120 mA
Power Dissipation (PD) 1.8 W (Ta) 1.8 W
Gate-Source Voltage (VGS) ±20 V (max) [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10 V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Gambaran Suhu Operasi -55 C to +150 C (junction) -55C to +150C (junction, typical)
Kemasan PG-SOT223-4 (SOT-223-3 pinout with exposed tab) PG-SOT223-4 (SOT-223-3 plus tab)
Jenis Pemasangan Surface Mount Surface Mount
Avalanche Energy Rated Yes (per datasheet) —
Lead-Free / RoHS Yes / Compliant —
Aras MSL 1 (per JEDEC J-STD-020) 1
Manufacturer — Infineon Technologies
Part Number — BSP135H6327XTSA1
On-Resistance RDS(on) max — 45 ohm at VGS = 0 V
On-Resistance RDS(on) — 25 ohm (typical, per digchip)
Operating Mode — Normally ON (depletion)
Status RoHS — Compliant

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