BSS123IXTSA1 vs 2N7002L Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS123IXTSA1 disebabkan oleh Infineon dan 2N7002L disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS123IXTSA1 2N7002L
Merek Infineon onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET N-Channel Enhancement Mode MOSFET
Technology OptiMOS Small-Signal High cell density trench MOSFET
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID) at TA=25C 190 mA —
Power Dissipation (PD) at TA=25C 500 mW —
RDS(on) (typical, VGS=10 V) 2.4 ohm —
RDS(on) (max per family datasheet) 6 ohm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] 1 V to 2.5 V
Kemasan PG-SOT-23-3 (SOT-23-3) SOT-23 (SOT-23-3)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (per family datasheet) —
Qualification Industrial —
Configuration Single N-Channel Single FET
Lead-Free / RoHS Yes (per distributor listing) —
Aras MSL [DATA_NEEDED: MSL rating] —
Gate Drive Logic Level Logic-level compatible —
Continuous Drain Current (ID) — 115 mA (Ta)
On-State Resistance (RDS(on)) — 7.5 ohm max at VGS = 5V
Gate-Source Voltage (VGS) — +/-20 V
Power Dissipation (PD) — 200 mW (Ta), 225 mW max
Switching Performance — Fast switching, rugged and reliable
Gate Drive — 5V logic-level enhancement mode
Typical Applications — Low-side switching, servo motor control, gate driving, logic-level shifting
Manufacturer — onsemi
Status RoHS — [DATA_NEEDED: RoHS status]

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