BSS214NWH6327XTSA1 vs BSP295H6327XTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS214NWH6327XTSA1 disebabkan oleh Infineon dan BSP295H6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSS214NWH6327XTSA1 | BSP295H6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS214NWH6327XTSA1 | — |
| Series | OptiMOS | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | Planar N-channel MOSFET |
| Drain-to-Source Voltage (Vdss) | 20 V | — |
| Continuous Drain Current (Id) @ 25C | 1.5 A | — |
| Rds(on) Max @ Vgs=4.5V | 250 mOhm | — |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 4.5 V | — |
| Power Dissipation (Pd) @ Ta=25C | 500 mW | — |
| Kemasan | PG-SOT323 (SOT-323-3) | PG-SOT223-4 (3 leads + tab) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55C to +150C (junction) | — |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 (Automotive) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 60 V |
| Continuous Drain Current (ID) at Ta=25 °C | — | 1.8 A |
| Power Dissipation (PD) at Ta=25 °C | — | 1.8 W |
| Drain-Source On-Resistance RDS(on) max | — | 300 mΩ |
| Gambaran Suhu Operasi | — | -55 °C to +150 °C |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Tape and Reel Packing Code | — | H6327 (7-inch reel) |
| Channel Mode | — | Enhancement |
| Drain Tab Connection | — | Pin 4 (tab) |