BSS214NWH6327XTSA1 vs BSP295H6327XTSA1 比較
詳細並排比較 BSS214NWH6327XTSA1 由 Infineon 與 BSP295H6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSS214NWH6327XTSA1 | BSP295H6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS214NWH6327XTSA1 | — |
| Series | OptiMOS | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | Planar N-channel MOSFET |
| Drain-to-Source Voltage (Vdss) | 20 V | — |
| Continuous Drain Current (Id) @ 25C | 1.5 A | — |
| Rds(on) Max @ Vgs=4.5V | 250 mOhm | — |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 4.5 V | — |
| Power Dissipation (Pd) @ Ta=25C | 500 mW | — |
| 封裝 | PG-SOT323 (SOT-323-3) | PG-SOT223-4 (3 leads + tab) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55C to +150C (junction) | — |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 (Automotive) |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 60 V |
| Continuous Drain Current (ID) at Ta=25 °C | — | 1.8 A |
| Power Dissipation (PD) at Ta=25 °C | — | 1.8 W |
| Drain-Source On-Resistance RDS(on) max | — | 300 mΩ |
| 工作溫度範圍 | — | -55 °C to +150 °C |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Tape and Reel Packing Code | — | H6327 (7-inch reel) |
| Channel Mode | — | Enhancement |
| Drain Tab Connection | — | Pin 4 (tab) |