BSS84PH6327XTSA2 vs BSS126H6327XTSA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS84PH6327XTSA2 disebabkan oleh Infineon dan BSS126H6327XTSA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS84PH6327XTSA2 BSS126H6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSS84PH6327XTSA2 —
FET Type P-Channel N-Channel Depletion Mode
Drain-to-Source Voltage (VDS) -60 V —
Continuous Drain Current (ID) -170 mA (Ta) —
Power Dissipation (PD) 360 mW (Ta) —
On-State Resistance (RDS(on)) max 8 ohm at VGS = -10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max values] —
Gate-to-Source Voltage (VGS) +/-20 V —
Kemasan PG-SOT23 (SOT-23-3) SOT-23-3 (PG-SOT23)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55C to +150C —
Qualification AEC-Q101 (Automotive) —
Technology Family SIPMOS OptiMOS —
Polarity P-Channel Enhancement Mode —
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Drain-Source Voltage (VDS) Max — 600 V
Continuous Drain Current (ID) at Ta — 21 mA
Power Dissipation (PD) at Ta — 500 mW
On-Resistance (RDS(on)) Max — 500 ohm (typical for depletion-mode)
Gate-Source Voltage (VGS) Range — [DATA_NEEDED: VGS max/min]
Technology — SIPMOS (DMOS)
Gambaran Suhu Operasi — -55C to +150C (junction, typical)
Kiraan Pin — 3
Configuration — Single
Channel Mode — Depletion (normally-on at VGS = 0)
Aras MSL — 1 (per JEDEC J-STD-020)
Boson Bebas — Yes (Infineon 'green' package)

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