BSS84PH6327XTSA2 vs BSS126H6327XTSA2 比較
詳細並排比較 BSS84PH6327XTSA2 由 Infineon 與 BSS126H6327XTSA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSS84PH6327XTSA2 | BSS126H6327XTSA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS84PH6327XTSA2 | — |
| FET Type | P-Channel | N-Channel Depletion Mode |
| Drain-to-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) | -170 mA (Ta) | — |
| Power Dissipation (PD) | 360 mW (Ta) | — |
| On-State Resistance (RDS(on)) max | 8 ohm at VGS = -10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | — |
| Gate-to-Source Voltage (VGS) | +/-20 V | — |
| 封裝 | PG-SOT23 (SOT-23-3) | SOT-23-3 (PG-SOT23) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55C to +150C | — |
| Qualification | AEC-Q101 (Automotive) | — |
| Technology Family | SIPMOS OptiMOS | — |
| Polarity | P-Channel Enhancement Mode | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Drain-Source Voltage (VDS) Max | — | 600 V |
| Continuous Drain Current (ID) at Ta | — | 21 mA |
| Power Dissipation (PD) at Ta | — | 500 mW |
| On-Resistance (RDS(on)) Max | — | 500 ohm (typical for depletion-mode) |
| Gate-Source Voltage (VGS) Range | — | [DATA_NEEDED: VGS max/min] |
| Technology | — | SIPMOS (DMOS) |
| 工作溫度範圍 | — | -55C to +150C (junction, typical) |
| 腳位數 | — | 3 |
| Configuration | — | Single |
| Channel Mode | — | Depletion (normally-on at VGS = 0) |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |
| 無鹵素 | — | Yes (Infineon 'green' package) |