BSZ018NE2LSATMA1 vs BSC020N03LSGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ018NE2LSATMA1 disebabkan oleh Infineon dan BSC020N03LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSZ018NE2LSATMA1 BSC020N03LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 25V —
Technology N-Channel Trench MOSFET —
Drain-Source Voltage (VDS) 25 V 30 V
Continuous Drain Current (TA) 23 A —
Continuous Drain Current (TC) 40 A —
Power Dissipation (TA) 2.1 W —
Power Dissipation (TC) 69 W —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) typical at VGS=10V] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Gate Charge Qg [DATA_NEEDED: total gate charge at VGS=10V] —
Gambaran Suhu Operasi -55C to +150C -55 C to +150 C (junction)
Kemasan PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020, per Infineon datasheet)
Status RoHS Compliant Compliant
Lead-Free Yes —
Boson Bebas Yes —
Series — OptiMOS 3
FET Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 28 A
Continuous Drain Current (ID) at Tc=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
Gate-Source Voltage (VGS) — +/-20 V
Gate Threshold Voltage (VGS(th)) — 1 V to 2.2 V (typical range, per datasheet)
On-State Resistance (RDS(on)) at VGS=10V — approximately 2.0 mOhm
Power Dissipation (PD) at Ta=25C — 2.5 W
Power Dissipation (PD) at Tc=25C — 96 W
Kemasan / Case — PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm)
Packaging — Tape & Reel

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