BSZ018NE2LSIATMA1 vs IAUC90N10S5N062ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ018NE2LSIATMA1 disebabkan oleh Infineon dan IAUC90N10S5N062ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSZ018NE2LSIATMA1 IAUC90N10S5N062ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ018NE2LSIATMA1 —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 25 V 100 V
Continuous Drain Current (ID) at Ta=25C 22 A —
Continuous Drain Current (ID) at Tc=25C 40 A 90 A
Pulsed Drain Current (IDM) 160 A —
Typical On-Resistance RDS(on) at VGS=10V 1.8 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Power Dissipation at Ta=25C 2.1 W —
Power Dissipation at Tc=25C 69 W —
Gambaran Suhu Operasi -55 C to +150 C —
Kemasan PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) PG-TDSON-8-34 (TDSON-8)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS (Infineon trench MOSFET) Trench MOSFET (OptiMOS 5, Generation 5)
Status RoHS Compliant —
Lead-Free Yes Yes
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Maximum On-Resistance RDS(on) max at VGS=10V — 6.2 mOhm
Gate-Source Threshold Voltage VGS(th) typ — 3.8 V
Maximum Power Dissipation (Tc=25C) — 115 W
Suhu Hubungan Operasi — -55 C to +175 C
Avalanche Rated — Yes (100% avalanche tested)
MSL (Moisture Sensitivity Level) — MSL1 (260 C peak reflow)
Automotive Qualification — AEC-Q101 qualified
RoHS / Green Product — Yes (RoHS compliant, Green Product)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga