BSZ036NE2LSATMA1 vs BSZ017NE2LS5IATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ036NE2LSATMA1 disebabkan oleh Infineon dan BSZ017NE2LS5IATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSZ017NE2LS5IATMA1 BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΩ TSDSON-8

BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΩ TSDSON-8

BSZ017NE2LS5IATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSZ036NE2LSATMA1 BSZ017NE2LS5IATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 25V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at TA=25C 16 A —
Continuous Drain Current (ID) at TC=25C 40 A —
Power Dissipation (PD) at TA=25C 2.1 W —
Power Dissipation (PD) at TC=25C 37 W —
Kemasan PG-TSDSON-8-FL (5x6 mm) PG-TSDSON-8-FL (8-PowerTDFN)
Jenis Pemasangan Surface Mount Surface Mount
Configuration Single —
Gambaran Suhu Operasi -55C to +150C —
Aras MSL 1 (Unlimited) —
Status RoHS Compliant Compliant
Lead-Free Yes —
Gate Drive Logic-level compatible —
Polarity — N-Channel
Continuous Drain Current (TA) — 27 A
Continuous Drain Current (TC) — 40 A
On-Resistance RDS(on) @ VGS=10V — 1.7 mΩ
On-Resistance Test Current — 20 A
Gate-Source Voltage (VGS) Rating — ±16 V
Gate Threshold Voltage VGS(th) — 2 V @ 250 µA
Total Gate Charge Qg — 30 nC @ VGS=10V
Input Capacitance Ciss — 2000 pF @ VDS=12V
Power Dissipation (TA) — 2.1 W
Power Dissipation (TC) — 50 W
Suhu Hubungan Operasi — -55°C to +150°C
Series / Family — OptiMOS 5 25V

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