BSZ150N10LS3GATMA1 vs BSC100N10NSFGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ150N10LS3GATMA1 disebabkan oleh Infineon dan BSC100N10NSFGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSZ150N10LS3GATMA1 BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon

BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon

BSZ150N10LS3GATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSZ150N10LS3GATMA1 BSC100N10NSFGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ150N10LS3GATMA1 —
Technology / Family OptiMOS 3 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc=25 °C) 40 A —
On-Resistance RDS(on) max 15 mΩ —
Power Dissipation (TA=25 °C) 2.1 W —
Pembuangan Kuasa (TC=25°C) 63 W —
Kemasan PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) PG-TDSON-8-1 (SuperSO8 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Operating Temperature Range (TJ) -55 °C to +150 °C —
Gate Threshold VGS(th) typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge Qg] —
Status RoHS Compliant Compliant
Lead-Free / Reflow Yes (lead-free, 260 °C peak reflow compatible) —
Aras MSL [DATA_NEEDED: MSL moisture sensitivity level] —
Series — OptiMOS
FET Type — N-Channel
Technology — MOSFET (Metal Oxide)
Continuous Drain Current (ID), Ta — 11.4 A
Continuous Drain Current (ID), Tc — 90 A
Power Dissipation (PD), Tc — 156 W
Drain-Source On-Resistance (RDS(on)) max — 10 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Gambaran Suhu Operasi — -55C to +150C (junction)
Gate Drive Voltage (recommended) — 10 V (for rated RDS(on))

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