BSZ150N10LS3GATMA1 vs BSC100N10NSFGATMA1 比較
詳細並排比較 BSZ150N10LS3GATMA1 由 Infineon 與 BSC100N10NSFGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
BSC100N10NSFGATMA1 ✓ 啟用中規格比較
| 參數 | BSZ150N10LS3GATMA1 | BSC100N10NSFGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ150N10LS3GATMA1 | — |
| Technology / Family | OptiMOS 3 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc=25 °C) | 40 A | — |
| On-Resistance RDS(on) max | 15 mΩ | — |
| Power Dissipation (TA=25 °C) | 2.1 W | — |
| 功率耗散 (TC=25°C) | 63 W | — |
| 封裝 | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TDSON-8-1 (SuperSO8 5x6) |
| 安裝類型 | Surface Mount | Surface Mount |
| Operating Temperature Range (TJ) | -55 °C to +150 °C | — |
| Gate Threshold VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free / Reflow | Yes (lead-free, 260 °C peak reflow compatible) | — |
| MSL 等級 | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Series | — | OptiMOS |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide) |
| Continuous Drain Current (ID), Ta | — | 11.4 A |
| Continuous Drain Current (ID), Tc | — | 90 A |
| Power Dissipation (PD), Tc | — | 156 W |
| Drain-Source On-Resistance (RDS(on)) max | — | 10 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| 工作溫度範圍 | — | -55C to +150C (junction) |
| Gate Drive Voltage (recommended) | — | 10 V (for rated RDS(on)) |