BTS3011TEATMA1 vs BTS500801TEAAUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BTS3011TEATMA1 disebabkan oleh Infineon dan BTS500801TEAAUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BTS3011TEATMA1 BTS500801TEAAUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Smart Low-Side Power Switch —
Number of Channels 1 1
On-Resistance R_DS(on) (typ.) 11 mΩ —
Continuous Load Current 10 A 10 A
Operating Voltage Range 3 V to 28 V —
Switch Technology N-channel vertical power MOSFET —
Input Type Logic-level CMOS compatible —
Kemasan PG-TO252-5 (DPAK-5) PG-TO252-5-11 (DPAK-5, 4+Tab)
Bilangan Pin 5 (4 + Tab) —
Suhu Hubungan Operasi -40 °C to +150 °C —
ESD Protection (HBM) ±8 kV (output pin) —
AEC-Q100 Qualification Grade 1 qualified —
Integrated Protections Current limit, overtemperature shutdown, overvoltage clamp, ESD, ground-loss protection —
Diagnostic Output Open-drain status feedback pin Current sense (IS pin)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Product Family — Classic PROFET (smart high-side switch)
Tetstruktur — 1:1 N-Channel high-side
Nominal Supply Voltage — 12 V
Load Supply Voltage Range — 4.5 V to 28 V
On-State Resistance (RDS(on)) — 10 milliohms (typical)
Konfigurasi Output — High-side
Fault Protection — Current limiting, over-temperature, over-voltage, reverse battery, ground loss, ESD
Gambaran Suhu Operasi — [DATA_NEEDED: operating temperature range]
Packaging — Tape & Reel
Automotive Qualified — Yes (AEC-Q100 target application)
Power Transistor Technology — N-channel vertical power MOSFET with charge pump

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