EP4CE75F29I7 vs EP4CE115F23I7N Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci EP4CE75F29I7 disebabkan oleh Intel dan EP4CE115F23I7N disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | EP4CE75F29I7 | EP4CE115F23I7N |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Series | Cyclone IV E | Cyclone IV E |
| Manufacturer | Intel (formerly Altera) | — |
| Logic Elements (LEs) | 75,408 | — |
| Embedded Memory (bits) | 2,810,880 | — |
| Embedded Memory Blocks | 274 (M9K) | — |
| Embedded 18×18 Multipliers | 200 | — |
| PLLs | 4 | — |
| User I/O Count | 426 | — |
| Kemasan | 780-ball FBGA (FineLine BGA) | 484-FBGA (F23) 23x23 mm, 1.0 mm pitch |
| Suhu Operasi | -40 °C to +100 °C (Industrial) | -40C to +100C (Industrial) |
| Process Node | 60 nm low-power CMOS | — |
| Core Voltage (VCCINT) | 1.0 V / 1.2 V selectable | — |
| Configuration Modes | JTAG, Active Serial (AS), Passive Serial (PS) | — |
| I/O Standards Supported | LVDS, LVTTL, LVCMOS, SSTL, HSTL | — |
| External Memory Interfaces | DDR/DDR2 SDRAM, QDRII SRAM | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 3 (168 hours) | 3 |
| Jenis Pemasangan | Surface Mount (BGA) | Surface Mount |
| Family | — | EP4CE115 (F23 package) |
| Logic Elements (LE) | — | 114,480 |
| Embedded Memory Bits | — | 3,981,312 bits |
| Maximum User I/Os | — | 280 |
| Logic Array Blocks (LABs) | — | 7,180 |
| Number of PLLs | — | 4 |
| 18x18 Hardware Multipliers | — | 266 |
| Core Voltage | — | 1.0 V / 1.2 V |
| I/O Voltage Banks | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Process Technology | — | 60 nm low-power CMOS (TSMC) |
| Configuration Method | — | JTAG, Active Serial, Active Parallel |
| Lead-Free | — | Yes |