EP4CE75F29I7 vs EP4CE115F23I7N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE75F29I7 sa pamamagitan ng Intel at EP4CE115F23I7N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE75F29I7 | EP4CE115F23I7N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Series | Cyclone IV E | Cyclone IV E |
| Manufacturer | Intel (formerly Altera) | — |
| Logic Elements (LEs) | 75,408 | — |
| Embedded Memory (bits) | 2,810,880 | — |
| Embedded Memory Blocks | 274 (M9K) | — |
| Embedded 18×18 Multipliers | 200 | — |
| PLLs | 4 | — |
| User I/O Count | 426 | — |
| Packhaging | 780-ball FBGA (FineLine BGA) | 484-FBGA (F23) 23x23 mm, 1.0 mm pitch |
| Temperature na Operasyon | -40 °C to +100 °C (Industrial) | -40C to +100C (Industrial) |
| Process Node | 60 nm low-power CMOS | — |
| Core Voltage (VCCINT) | 1.0 V / 1.2 V selectable | — |
| Configuration Modes | JTAG, Active Serial (AS), Passive Serial (PS) | — |
| I/O Standards Supported | LVDS, LVTTL, LVCMOS, SSTL, HSTL | — |
| External Memory Interfaces | DDR/DDR2 SDRAM, QDRII SRAM | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 3 (168 hours) | 3 |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount |
| Family | — | EP4CE115 (F23 package) |
| Logic Elements (LE) | — | 114,480 |
| Embedded Memory Bits | — | 3,981,312 bits |
| Maximum User I/Os | — | 280 |
| Logic Array Blocks (LABs) | — | 7,180 |
| Number of PLLs | — | 4 |
| 18x18 Hardware Multipliers | — | 266 |
| Core Voltage | — | 1.0 V / 1.2 V |
| I/O Voltage Banks | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Process Technology | — | 60 nm low-power CMOS (TSMC) |
| Configuration Method | — | JTAG, Active Serial, Active Parallel |
| Lead-Free | — | Yes |